Method for manufacturing novel light-trapping synergetic antireflection structure on basis of LSP (localized surface plasma) effect

A new type of anti-reflection technology, applied in the field of solar cells, can solve the problems of high preparation cost, difficult operation, complex equipment, etc., and achieve the effect of simple method, simple equipment requirements and time saving

Active Publication Date: 2013-04-03
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods generally require complicated equipment, complicated process, difficult operation and high preparation cost.

Method used

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  • Method for manufacturing novel light-trapping synergetic antireflection structure on basis of LSP (localized surface plasma) effect
  • Method for manufacturing novel light-trapping synergetic antireflection structure on basis of LSP (localized surface plasma) effect
  • Method for manufacturing novel light-trapping synergetic antireflection structure on basis of LSP (localized surface plasma) effect

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Embodiment 1

[0019] 1. Cut a (100) single crystal silicon wafer with a resistivity of 12 Ω·cm into 2×2 cm samples, then soak in acetone solution, ultrasonicate in a water bath at 35 °C for 10 min; then rinse with deionized water for 3 Sonicate in deionized water for 10 min after soaking in deionized water for 10 min; take out the sample, soak in CP4A cleaning solution at room temperature for 5 min; finally soak in 14% hydrofluoric acid solution for 2 min, take out the sample, and rinse with deionized water 3 times, then blow dry with nitrogen, and put it in a desiccator for later use.

[0020] 2. Etch the sample treated in step 1 with an etching solution for 40 minutes in a water bath at 80 °C to obtain a silicon wafer with a pyramidal surface structure. During the etching process, a large number of bubbles can be observed on the surface and surroundings of the silicon wafer. As the etching time increases, the bright silicon surface gradually darkens and loses luster. After the etching, t...

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Abstract

The invention belongs to the technical field of solar cells, and particularly relates to a method for manufacturing a novel light-trapping synergetic antireflection structure on the basis of an LSP (localized surface plasma) effect. The method includes etching a cone shape on the surface of monocrystalline silicon by alkali; and depositing a layer of discontinuous silver nanoparticles on the surface of a cone by means of sputtering and annealing to obtain the novel light-trapping structure with the silver nanoparticles and a cone structure which are compounded with one another. The reflectivity of the novel light-trapping synergetic antireflection structure is reduced by 3.4% within the total solar spectrum range as compared with a pure cone structure. The method for manufacturing the effective light-trapping structure includes simple and practical silicon wafer cleaning and silver nanoparticle sputtering and depositing technological procedures, and a constant-temperature wet etching means is combined with the LSP effect, so that an excellent antireflection effect is realized as compared with the traditional structure manufactured by alkaline etching, and design and manufacturing processes of the method provide novel technical means for improving the efficiency of silicon and the efficiency of a thin film silicon solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a preparation method of a novel anti-reflection structure based on the LSP effect for light trapping and efficiency enhancement. technical background [0002] Silicon is the most abundant semiconductor element on the earth's crust, and its smelting and purification technology is relatively mature, so it has become the main raw material for solid-state electronic devices. At present, the growth rate of silicon material application in the field of photovoltaics has been higher than that in the field of integrated circuits. Due to the wide range of sources and low cost of silicon materials, it occupies a dominant position in the solar cell market. With the continuous development and progress of solar cell technology, improving the conversion efficiency of solar cells and reducing costs are the focus of research in the field of solar cells. Among them, reducing the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23F1/32C23C14/16C23C14/35
CPCY02P70/50
Inventor 李美成戴菡丁瑞强陈召谷田生范汇洋
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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