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Thermosensitive quantum dot material with core-shell structure and preparation method thereof

A technology of quantum dot material and core-shell structure, which is applied in the field of semiconductor nanomaterial preparation, can solve the problems of small span of temperature-changing color interval, unclear change of luminescent color, no clear correspondence between temperature and color, etc., and achieves wide discoloration range. , uniform size, good monodispersity effect

Inactive Publication Date: 2014-01-01
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the most important thing is that the change of luminous color caused by temperature change is not clear enough, there is no clear corresponding relationship between temperature and color, and the span of temperature-changing color range is small, which can only change from red to yellow.

Method used

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  • Thermosensitive quantum dot material with core-shell structure and preparation method thereof
  • Thermosensitive quantum dot material with core-shell structure and preparation method thereof
  • Thermosensitive quantum dot material with core-shell structure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0041] First, prepare InP quantum dots: Take 0.2 millimoles of indium acetate and 0.7 millimoles of myristic acid and add them to 5 milliliters of octadecene, heat up to 80 ° C, after vacuuming, heat up to 188 ° C under the protection of nitrogen, inject 0.5 In a milliliter concentration of 0.2mol / L 3-(trimethylsilyl) phosphorus octadecene solution and 1.2 mmol octylamine, after injection, naturally cool down to 178°C, keep the temperature at 178°C for 30 minutes to obtain InP quantum dots , the obtained InP quantum dots have a diameter of about 2nm.

[0042] Then, Cu doping is carried out: the prepared InP quantum dots are directly cooled to 60°C, and a total amount of 1 ml of octadecene solution of copper myristate with a concentration of 0.005mmol / L is dropped into the system, and then the temperature is raised to 150°C, keep the temperature for 20 minutes to get a Cu-doped InP quantum dot nucleus solution, the amount of Cu doped is Cu:P=1:20 by molar ratio.

Embodiment 2

[0044] First, prepare InP quantum dots: Take 0.2 millimoles of indium acetate and 0.7 millimoles of myristic acid and add them to 5 milliliters of octadecene, heat up to 100 ° C, after vacuuming, heat up to 188 ° C under the protection of nitrogen, inject 0.5 In a milliliter concentration of 0.2mol / L 3-(trimethylsilyl) phosphorus octadecene solution and 1.2 mmol octylamine, after injection, naturally cool down to 178°C, keep the temperature at 178°C for 30 minutes to obtain InP quantum dots , the obtained InP quantum dots have a diameter of about 2nm.

[0045] Then, Cu doping is carried out: the prepared InP quantum dots are directly cooled to 80 ° C, and a total amount of 1 milliliter of octadecene solution of copper myristate with a concentration of 0.01 mmol / L is dropped into the system, and then the temperature is raised to 150°C, keep the temperature for 30 minutes to get a Cu-doped InP quantum dot nucleus solution, the amount of Cu doped is the molar ratio Cu:P=1:10.

Embodiment 3

[0047] First, prepare InP quantum dots: take 0.2 millimoles of indium acetate and 0.7 millimoles of myristic acid and add them to 5 milliliters of octadecene, heat up to 120 ° C, after vacuuming, heat up to 188 ° C under the protection of nitrogen, inject 0.5 In a milliliter concentration of 0.2mol / L 3-(trimethylsilyl) phosphorus octadecene solution and 1.2 mmol octylamine, after injection, naturally cool down to 178°C, keep the temperature at 178°C for 30 minutes to obtain InP quantum dots , the obtained InP quantum dots have a diameter of about 2nm.

[0048] Then, Cu doping is carried out: the prepared InP quantum dots are directly cooled to 100° C., and a total amount of 1 milliliter of octadecene solution of copper myristate with a concentration of 0.02 mmol / L is dropped into the system, and then the temperature is raised to 150°C, keep the temperature for 40 minutes to get a Cu-doped InP quantum dot nucleus solution, the amount of Cu doped is Cu:P=1:5 by molar ratio.

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Abstract

The invention discloses a thermosensitive quantum dot material with a core-shell structure and a preparation method thereof, belonging to the technical field of preparation of semiconductor nanomaterials. A core of a quantum dot structure comprises Cu-doped InP quantum dots; on the basis of the core, the quantum dots are coated with an II-VI semiconductor ZnS isolating layer for isolating an inner material from an outer material, then coated with a green light-emitting II-VI semiconductor CdSe nanocrystal shell layer, and finally coated with a ZnS protective layer to enable the CdSe layer to become more stable, thus forming Cu@InP / ZnS / CdSe / ZnS quantum dots ultimately. The quantum dots are highly sensitive to temperature, specifically at different temperatures, the thermosensitive quantum dot material can emit different colors of light: green light is emitted at room temperature, red light is emitted at 200 DEG C, while yellow light at different levels is emitted at an intermediate temperature; the quantum dots are stable in properties, uniform in size and good in dispersion; and after being coated with a shell layer, the quantum dots become perfect spherical particles.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nano material preparation. The invention relates to a core-shell quantum dot material and a synthesis method thereof. The core-shell quantum dot material is highly sensitive to temperature, and is specifically manifested in that the material emits light of different colors under different temperature conditions. Background technique [0002] After the semiconductor material gradually decreases from the bulk phase to a certain critical size (1-20 nanometers), the volatility of its carriers becomes significant, and the movement will be limited, resulting in an increase in kinetic energy. The corresponding electronic structure is continuous from the bulk phase to The energy level structure becomes a quasi-split discontinuity, a phenomenon known as the quantum size effect. The more common semiconductor nanoparticles, that is, quantum dots, mainly include II-VI, III-V and IV-VI groups. These ty...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88
Inventor 解仁国李冬泽杨文胜
Owner JILIN UNIV
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