Preparation method of silicon-doped titanium oxide nanowires with super-hydrophilic performance
A technology of silicon doping and titanium oxide, applied in chemical instruments and methods, from chemical reactive gases, single crystal growth and other directions, can solve the problem of not being prepared titanium dioxide nanowires, and achieve low cost and good super hydrophilic performance. , The effect of not easy to hurt the accident
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Embodiment 1
[0029] Reaction temperature 600 o C, Ti(OC 4 h 9 ) 4 constant temperature at 40 o C, Ti(OC 4 h 9 ) 4 The pipeline passed through is insulated to 45 o C, the Ti(OC 4 h 9 ) 4 、SiH 4 and N 2 Mixing, total gas volume 2500sccm / min, adjust reaction gas Si / Ti molar ratio to 3:1, N 2 : 99.6%, the pressure of each gas at the inlet of the gas mixing chamber is 130KPa, the pressure of the deposition system is maintained at 120KPa, and the deposition time is about 480 seconds. Then turn off Ti(OC 4 h 9 ) 4 , the SiH 4 and N 2 Mixed, the gas volume is 1500sccm / min, N 2 : 99.5%, about 15 seconds. Finally close Ti(OC 4 h 9 ) 4 and SiH 4 , will O 2 and N 2 Mixed gas is passed into reactor with the amount of 400sccm / min, O 2 / N 2 The molar ratio is 1:15, and the time is 8 hours. Formation of anatase phase TiO on the substrate 2 Nanowires. See the attached table for the results.
Embodiment 2
[0031] Reaction temperature 700 o C, Ti(OC 4 h 9 ) 4 constant temperature at 50o C, Ti(OC 4 h 9 ) 4 The pipeline passing through is insulated to 60 o C, the Ti(OC 4 h 9 ) 4 、SiH 4 and N 2 Mixing, total gas volume 1500sccm / min, adjust reaction gas Si / Ti molar ratio to 1:1, N 2 : 99.0%, the pressure of each gas at the inlet of the gas mixing chamber is 120KPa, the pressure of the deposition system is maintained at 110KPa, and the deposition time is about 300 seconds. Then turn off Ti(OC 4 h 9 ) 4 , the SiH 4 and N 2 Mixing, the gas volume is 1000sccm / min, N 2 : 98%, about 10 seconds. Finally close Ti(OC 4 h 9 ) 4 and SiH4, the O 2 and N 2 Mixed gas is passed into reactor with the amount of 300sccm / min, O 2 / N 2 The molar ratio is 1:10, and the time is 6 hours. Formation of rutile phase TiO on the substrate 2 Nanowires. See the attached table for the results.
Embodiment 3
[0033] Reaction temperature 500 o C, Ti(OC 4 h 9 ) 4 constant temperature at 45 o C, Ti(OC 4 h 9 ) 4 The pipeline passed through is insulated to 55 o C, the Ti(OC 4 h 9 ) 4 、SiH 4 and N 2 Mixing, the total gas volume is 2000sccm / min, and the reaction gas Si / Ti molar ratio is adjusted to 1:1, N 2 : 98.0%, the pressure of each gas at the inlet of the gas mixing chamber is 150KPa, the pressure of the deposition system is maintained at 120KPa, and the deposition time is about 600 seconds. Then turn off Ti(OC 4 h 9 ) 4 , the SiH 4 and N 2 Mixed, the gas volume is 1500sccm / min, N 2 : 95%, about 20 seconds. Finally close Ti(OC 4 h 9 ) 4 and SiH 4 , will O 2 and N 2 Mixed gas is passed into reactor with the amount of 500sccm / min, O 2 / N 2 The molar ratio is 1:1, and the time is 10 hours. Formation of anatase phase TiO on glass substrates 2 Nanowires. See the attached table for the results.
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