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Additive for crystalline silicon polishing solution and application method thereof

An additive, crystalline silicon technology, applied in polishing compositions, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc. The preparation and use process is simple, the reaction time is fast, and the equipment is cheap.

Active Publication Date: 2013-09-25
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The polishing methods currently used mainly include the following three types: the first is nitric acid, hydrofluoric acid and sulfuric acid polishing, but the polishing effect of silicon wafers after polishing by this method is not good, and the environmental pollution is relatively serious; the second is concentrated alkali Polishing, where the concentration of sodium hydroxide or potassium hydroxide is more than 20%, the silicon wafer polished by this method is not good, and the process is unstable; the third is 25% tetramethylammonium hydroxide solution polishing , the polishing effect of silicon wafers polished by this method is better, but the cost is high, and the reaction time is long, about 10-15min

Method used

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  • Additive for crystalline silicon polishing solution and application method thereof
  • Additive for crystalline silicon polishing solution and application method thereof

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Experimental program
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Effect test

Embodiment 1

[0022] The following process steps are taken: 1) Preparation of additives for crystalline silicon polishing liquid: using 100 g of deionized water as a solvent, 2 g of alkyl glucosides, 1 g of pyrazine and 0.5 g of polyethylene glycol are dissolved in deionized water to obtain additives; 2 ) Preparation of alkaline solution: Dissolve 30g of sodium hydroxide in deionized water to obtain 1000g of alkaline solution; 3) Add 20g of additives to 1000g of alkaline solution; 4) Immerse the single crystal silicon wafer in the polishing solution for surface polishing, The polishing temperature is 80° C., and the polishing time is 4 minutes.

[0023] figure 1 A microscope photo of the polished surface of the obtained silicon wafer is given. From the figure, it can be seen that a uniform and smooth square structure is formed on the surface of the silicon wafer, and the size is about 20-30 μm. figure 2 The reflectance spectrum of the polished surface of the silicon wafer is given, and it...

Embodiment 2

[0025] The following process steps are taken: 1) Preparation of additives for crystalline silicon polishing liquid: 100 g of deionized water is used as a solvent, 2.5 g of alkyl glycosides, 1 g of pyrazine and 0.75 g of polyethylene glycol are dissolved in deionized water to prepare additives; 2) Preparation of alkaline solution: Dissolve 50g of tetramethylammonium hydroxide in deionized water to obtain 1000g of alkaline solution; 3) Add 25g of additives to 1000g of alkaline solution; 4) Dip the polycrystalline silicon wafer into the polishing solution for surface Polishing, the polishing temperature is 82°C, and the polishing time is 3min30s.

Embodiment 3

[0027] The following process steps are taken: 1) Preparation of additives for crystalline silicon polishing liquid: using 100 g of deionized water as a solvent, 3 g of alkyl glucosides, 1.5 g of pyrazine and 0.5 g of polyethylene glycol are dissolved in deionized water to prepare the additives; 2) Preparation of alkaline solution: Dissolve 40g of potassium hydroxide in deionized water to obtain 1000g of alkaline solution; 3) Add 20g of additives to 1000g of alkaline solution; 4) Immerse the single crystal silicon wafer in the polishing solution for surface polishing , the polishing temperature is 75°C, and the polishing time is 5min.

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Abstract

The invention discloses an additive for a crystalline silicon polishing solution, and the additive is composed in parts by weight: 2-5 parts of alkyl indican, 1-3 parts of pyrazine, 0.5-2 parts of polyethylene glycol and 100 parts of water. In the process of carrying out surface polishing on silicon wafers, the additive disclosed by the invention is added into an alkaline solution, so that an excellent polishing effect can be achieved.

Description

technical field [0001] The invention relates to an additive for crystalline silicon polishing fluid and a method for using the same. Background technique [0002] In the manufacturing process of crystalline silicon solar cells, the back polishing of silicon wafers has the following advantages: 1. Optical gain, so that the infrared light in sunlight can be reflected back, so that the cells can absorb more light, so that the The short-circuit current is increased; 2. The back field is uniform, thereby increasing the open-circuit voltage of the cell; 3. The back contact is improved, which can improve the contact between the back of the silicon wafer and the aluminum paste, and achieve a good ohmic contact; 4. Significant passivation effect, Combined with rear passivation, the efficiency of the cell can be significantly improved. [0003] The polishing methods currently used mainly include the following three types: the first is nitric acid, hydrofluoric acid and sulfuric acid ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/00H01L21/306
Inventor 章圆圆陈培良符黎明
Owner CHANGZHOU SHICHUANG ENERGY CO LTD