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Preparation method of ITO thin film

A thin film and coating technology, which is applied in the field of ITO thin film preparation, achieves the effects of high feasibility, low equipment cost and high work function

Active Publication Date: 2013-09-25
徐东
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a method for preparing an ITO thin film, aiming to solve the problem of how to provide an ITO thin film with low cost, simple process and precise control of the content of each component

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  • Preparation method of ITO thin film

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preparation example Construction

[0014] The embodiment of the present invention provides a kind of preparation method of ITO film, comprises the following steps:

[0015] S01. Prepare ITO sol: add stabilizer and surfactant to the mixed solution containing indium salt and tin salt for mixing and aging treatment to obtain ITO sol;

[0016] S02. Preparation of ITO thin film: the ITO sol is subjected to at least one post-coating drying treatment on the substrate, and then annealed to obtain an ITO thin film, wherein the annealing method is: dry the coated matrix in N 2 and H 2 Incubate at 450-700°C for 1-2h under a mixed atmosphere, wherein the N 2 and H 2 H in mixed atmosphere 2 The volume fraction is 1 to 4%.

[0017] Specifically, in the above-mentioned step S01, the preparation method of the mixed solution is not limited, it may be to dissolve the indium salt in an organic solvent, reflux, stir and heat at 55-70°C for 1-3h, and wait for it to cool to room temperature, specifically 20 At -30°C, mix it wi...

Embodiment 1

[0031] Embodiment one kind of preparation method of ITO thin film

[0032] Preparation of ITO sol: Dissolve indium trichloride in acetylacetone at 55°C for 1 h under reflux, dissolve tin dichloride dihydrate in a small amount of absolute ethanol, and then mix the two solutions at room temperature, wherein the Sn / (Sn+In)=5%, add a small amount of monoethanolamine, monostearic fatty acid glyceride, continue to stir for 1 hour, and then obtain ITO sol after aging for 3 hours.

[0033] Substrate treatment: Ultrasonic cleaning of quartz glass for 10 minutes, rinsing with deionized water for several times, boiling in acetone for 10 minutes, finally rinsing with methanol and deionized water in turn, followed by nitrogen blowing and drying in an oven at 70°C.

[0034] Coating film pulling: ITO film was prepared by dipping and pulling, the quartz glass substrate was vertically immersed in the gel for 20s, and pulled at a constant speed of 5cm / min to obtain a uniform sol film.

[0035...

Embodiment 2

[0037] Embodiment two a kind of preparation method of ITO thin film

[0038] Sol preparation: dissolve indium chloride tetrahydrate in acetylacetone at 65°C and heat for 2 hours under reflux, anhydrous tin chloride is dissolved in a small amount of absolute ethanol, and then mix the two solutions at room temperature, in which the Sn / (Sn +In)=5-12%, add diethanolamine, polyoxyethylene sorbitan monooleate, continue to stir for 2 hours, and then age for 4 hours to obtain ITO sol.

[0039] Substrate treatment: Ultrasonic cleaning of quartz glass for 20 minutes, rinsing with deionized water for several times, boiling in acetone for 15 minutes, finally rinsing with methanol and deionized water in sequence, followed by nitrogen blowing and drying in an oven at 80°C.

[0040] Coating film pulling: ITO film was prepared by dipping and pulling, the quartz glass substrate was vertically immersed in the gel for 10s, and pulled at a constant speed of 10cm / min to obtain a uniform sol film. ...

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Abstract

The invention belongs to the field of photoelectric materials, and provides a preparation method of an ITO thin film. The method comprises the following steps of preparing ITO colloidal sol and preparing the ITO thin film. The ITO thin film prepared through the mentioned method is smooth in surface and compact in particle, average transmittance in a visible light region reaches up to 90%, electrical resistivity reaches grade10 to grade4, work function reaches 4.9eV, and the ITO thin film can meet application in the field of LCDs, solar thin film batteries and the like.

Description

technical field [0001] The invention belongs to the field of photoelectric materials, in particular to a preparation method of an ITO thin film. Background technique [0002] Indium Tin Oxide (ITO for short) film is a kind of transparent and conductive oxide film, which has the advantages of high conductivity, high visible light transmittance, good chemical stability, and firm combination with the substrate. It is mainly used in the field of optoelectronic devices, mainly Used in flat liquid crystal display (LCD), sensors, electroluminescence (ELD) and functional glass, etc., especially with the rapid development of solar thin film batteries in recent years, ITO thin films, as a necessary component of solar cells, have greatly promoted Market demand for ITO thin films. [0003] The main performance indicators of ITO thin films in product applications are reflected in resistivity, transmittance and work function. At present, the preparation methods of ITO thin films mainly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 徐东徐永清石佳光
Owner 徐东
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