Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing copper indium gallium selenide thin film with sulfur-rich surface

A copper indium gallium selenide and thin film technology, which is applied in the field of photovoltaic new energy materials, can solve the problems of difficult control of product stoichiometric ratio, poor thin film compactness and adhesion, and narrow thin film energy band width, etc. Low, improve the effect of absorption and utilization

Inactive Publication Date: 2013-10-09
徐东
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to provide a method for preparing a copper indium gallium selenide thin film with a surface rich in sulfur, which aims to solve the problems of complex preparation methods, difficulty in controlling the stoichiometric ratio of the product, high impurity phase composition, poor compactness and adhesion of the film , The problem of narrow band width of thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0013] The embodiment of the present invention provides a method for preparing a sulfur-rich copper indium gallium selenium film on the surface, which includes the following steps:

[0014] S01. Preparation of copper indium gallium selenium nanoparticles: mixing copper salt, indium salt, gallium salt and selenium source compound with oleylamine to synthesize copper indium gallium selenium nanoparticles;

[0015] S02. Preparation of copper indium gallium selenide nanocrystalline ink: dispersing the copper indium gallium selenide nano particles in an organic solvent to form a copper indium gallium selenide nanocrystalline ink;

[0016] S03. Preparation of a copper indium gallium selenide film: coating the copper indium gallium selenide nano ink on a substrate to form a copper indium gallium selenide precursor prefabricated film, and obtaining a copper indium gallium selenide film after annealing;

[0017] S04. Copper indium gallium selenide thin film vulcanization treatment: in the prese...

Embodiment 1

[0034] (1) At room temperature, add 1.0mmol copper nitrate, 0.8mmol indium nitrate, 0.2mmol gallium nitrate and 2.0mmol selenium powder to a 50mL three-necked flask, then add 20mL oleylamine, and connect the device. Then, the reaction liquid was circulated and purged twice by means of vacuum and nitrogen atmosphere circulation, each time was purged for 15 minutes. Finally, the reaction vessel was filled with nitrogen. Under magnetic stirring, heat the reaction device. When it rises to 265°C, keep the temperature constant and react for 40 minutes. Then, the reaction solution is cooled to room temperature, and the reaction solution is filtered to obtain a solid product, which is washed 5 times with a mixture of one or more of ethanol, isopropanol, hexane or chloroform to obtain a clean solid product.

[0035] (2) Then put the product in toluene to form a stable colloidal solution with a concentration of 30 mg / mL-copper indium gallium selenide nanocrystalline ink.

[0036] (3) Cut t...

Embodiment 2

[0039] (1) At room temperature, add 1.0mmol copper chloride, 0.8mmol indium nitrate, 0.3mmol gallium nitrate and 2.0mmol selenium powder into a 50mL three-necked flask, then add 20mL oleylamine, and connect the device. Then, the reaction liquid was circulated and purged twice by means of vacuum and nitrogen atmosphere circulation, each time was purged for 15 minutes. Finally, the reaction vessel was filled with nitrogen. Under magnetic stirring, heat the reaction device. When it rises to 280°C, keep the temperature constant, react for 40 minutes, and then cool the reaction solution to room temperature. The reaction liquid is filtered to obtain a solid product, and the mixture is washed 5 times with one or more of ethanol, isopropanol, hexane or chloroform to obtain a clean solid product.

[0040] (2) Then put the product in toluene to form a stable colloidal solution with a concentration of 50 mg / mL-copper indium gallium selenide nanocrystalline ink.

[0041] (3) Cut the lime-sod...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
concentrationaaaaaaaaaa
Login to View More

Abstract

The invention is suitable for the technical field of photovoltaic new energy materials and provides a method for preparing a copper indium gallium selenide thin film with the sulfur-rich surface. The method comprises the following steps: preparing copper indium gallium selenide nano particles, preparing copper indium gallium selenide nanocrystalline ink, preparing the copper indium gallium selenide thin film, and conducting sulfidizing on the copper indium gallium selenide thin film. The method is simple in process, convenient to operate and low in cost, facilitates large-scale production of a solar thin film cell, optimizes the energy band structure of the copper indium gallium selenide thin film, enables energy of solar spectra to be fully utilized, and further promotes the improvement of cell interface performance.

Description

Technical field [0001] The invention belongs to the technical field of photovoltaic new energy materials, and in particular relates to a method for preparing a sulfur-rich copper indium gallium selenium film on the surface. Background technique [0002] With the development of industry and population growth, non-renewable energy sources such as coal, oil, and natural gas have been excessively consumed, which has led to energy shortages. Therefore, people began to pay attention to renewable energy such as wind energy, geothermal energy, day and night energy, and solar energy. Among them, solar energy has the advantages of large energy, inexhaustible, clean and pollution-free, and has become the most promising energy source. There are two main forms of utilization of solar energy: thermal energy and electrical energy, such as solar water heaters and solar cells. [0003] Solar cells have received widespread attention for their wide range of uses, convenient portability, and freedom...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032
CPCY02P70/50
Inventor 徐东徐永清杨杰
Owner 徐东
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com