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Sputtering method for sull

A technology of oxide thin film and thin film, which is applied in the direction of sputtering plating, ion implantation plating, metal material coating technology, etc., can solve the problems of poor withstand voltage characteristics and insufficient density of the film, and achieve large process window and high pressure resistance. Good effect

Active Publication Date: 2013-12-11
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For oxide dielectric films, the sputtering method currently used to prepare oxide dielectric films is not dense enough and has poor withstand voltage characteristics. Therefore, it is necessary to improve the process to prepare oxide dielectric films with excellent withstand voltage properties.

Method used

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  • Sputtering method for sull

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The invention relates to a sputtering method of an oxide thin film, which is to directly feed ozone into a reaction chamber of a physical vapor deposition device as a sputtering gas to deposit an oxide thin film. Preferably, the flow rate of ozone introduced into the reaction chamber accounts for 0.1%-50% of the total flow rate of the gas used for sputtering. Preferably, the flow rate of ozone introduced into the reaction chamber accounts for 5% or 10% or 30% or 40% of the total flow rate of the gas used for sputtering.

[0028] The physical vapor deposition equipment can be any one of DC sputtering, radio frequency sputtering, intermediate frequency sputtering, AC sputtering or pulsed DC sputtering equipment. The physical vapor deposition equipment can be a single-target direct sputtering method or a multi-target co-sputtering method.

[0029] The sputtering method of the oxide thin film of the present invention is to directly introduce ozone into the reaction chamber...

Embodiment 2

[0037] The indium zinc gallium oxide ceramic target is used as the sputtering target 4, and figure 1 The shown physical vapor deposition equipment prepares oxide semiconductor films with low oxygen vacancies by radio frequency magnetron sputtering.

[0038] Its concrete preparation steps are as follows:

[0039] (1) Vacuum the sputtering reaction chamber 1 to a pressure of 10 -4 Below Pa;

[0040] (2) Passing in the substrate glass substrate 3 by the robot arm;

[0041] (3) Charge Ar, turn on the ozone generator 8, adjust the flow rate of the charged gas through the flow controller 7, so that the flow ratio of the ozone in the reaction chamber 1 to the total sputtering gas is 5%, and control the total sputtering gas The pressure is 5mTorr; Among them, the ozone generator generates ozone by means of corona discharge.

[0042] (4) After the air pressure in the sputtering chamber is stabilized, turn on the RF power supply 9 and set the power of the device to 500 W;

[0043]...

Embodiment 3

[0047] The indium zinc oxide ceramic target is used as the sputtering target 4, such as figure 1 The shown physical vapor deposition equipment uses DC magnetron sputtering to prepare oxide semiconductor thin films with low oxygen vacancies.

[0048] Its concrete preparation steps are as follows:

[0049] (1) Vacuum the sputtering reaction chamber 1 until the vacuum degree reaches 10-4 Below Pa;

[0050] (2) Pass in the flexible PI substrate 3 with glass as the carrier through the robot arm;

[0051] (3) Fill in Ar, turn on the ozone generator 8 to generate ozone by ultraviolet irradiation, adjust the flow rate of the charged gas through the flow controller 7, so that the flow ratio of ozone and total sputtering gas is 5%, and control the total sputtering The gas pressure is 5mTorr;

[0052] (4) After the air pressure in the sputtering chamber is stable, turn on the RF power supply 9 and set the power to 500 W;

[0053] (5) By controlling the sputtering time, a 100nm indiu...

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Abstract

The invention discloses a sputtering method for a sull. According to the invention, ozone is inlet into a reaction chamber of a physical vapor deposition device directly to be used as sputtering gases to conduct sull deposition; the flow rate of the ozone inlet into the reaction chamber makes up 0.1%-50% of total flow of the gases used by sputtering; the physical vapor deposition device is any one of devices of direct current sputtering, radio-frequency sputtering, mid-frequency sputtering, alternating current sputtering or impulsing direct current sputtering, and adopts a single-target direct sputtering manner or a multi-target co-sputtering manner; the ozone is prepared by any one of manners of a corona discharge method, an ultraviolet radiation method, or an electrolytic method through an ozonizer; therefore, the method is suitable for the preparation of a metal-oxide semiconductor film, a metal-oxide transparent conducting thin film, and a metal-oxide dielectric film. Through the adoption of the method, the oxide semiconductor film with low oxygen vacancy content, the oxide transparent conducting thin film with high transparency and low resistance, and the oxide dielectric film with large process window and good pressure resistant property can be prepared.

Description

technical field [0001] The invention relates to the technical field of oxide thin films, in particular to a sputtering method for oxide thin films. Background technique [0002] Metal oxide thin films are currently gaining traction due to their potential applications in thin film transistors. With the rapid development of the information industry, the thin film preparation process has become more and more important, and people's pursuit of preparing higher quality thin films has become more and more urgent. [0003] The PVD sputtering coating method has been widely used due to its good repeatability, high efficiency, and large-scale mass production. When depositing oxide films by PVD sputtering, the commonly used sputtering gases are Ar, O 2 , N 2 and H 2 O. The main role of Ar gas is to ionize under the action of an electric field to generate Ar + Ions, on the one hand, bombard the target, transfer the material on the target to the substrate for thin film deposition;...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
Inventor 徐苗徐华陈子恺陶洪王磊彭俊彪
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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