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Negative photoresist stripper composition

A photoresist and stripping agent technology, applied in the direction of photosensitive material processing, can solve problems affecting product quality, wiring material corrosion, etc., and achieve the effect of excellent stripping

Inactive Publication Date: 2014-01-15
刘超
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, photoresist residues are similar in composition to wiring materials, so when using these photoresist residue removal solutions for substrate processing, there is a problem of corroding wiring materials, thereby affecting product quality

Method used

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preparation example Construction

[0037] The preparation method of described cinnamyl imidazoline is specifically:

[0038] Put 10ml of analytically pure diethylenetriamine in a four-necked flask, raise the temperature to 150°C, add 3ml of analytically pure toluene dropwise, add 22g of analytically pure cinnamic acid, stir under a nitrogen atmosphere, and then raise the temperature to 170°C to start acyl After reaction for 5 hours, the temperature was raised to 240°C to start cyclodehydration for 3 hours. After the reaction was completed, it was placed in a vacuum drying oven to dry to obtain cinnamyl imidazoline in a brown viscous shape. The reaction formula is as follows:

[0039]

[0040] The preparation method of the 1,3-bis(2-benzimidazolyl)-2-oxapropane is specifically:

[0041] Take 10.8g of o-phenylenediamine and 7g of diglycolic acid, mix and dissolve them in 120ml of hydrochloric acid solution with a concentration of 6mol / L, stir mechanically, and reflux at 90°C for 12h. After the system is cooled...

Embodiment 1

[0044] The preparation of embodiment 1 cinnamyl imidazoline

[0045] Put 10ml of analytically pure diethylenetriamine in a four-necked flask, raise the temperature to 150°C, add 3ml of analytically pure toluene dropwise, add 22g of analytically pure cinnamic acid, stir under nitrogen, and then heat up to 170°C to start acyl After 5 hours of reaction, the temperature was raised to 240° C. to start cyclodehydration for 3 hours. After the reaction was completed, it was placed in a vacuum oven to dry to obtain cinnamyl imidazoline in a brown viscous shape.

Embodiment 21

[0046] Embodiment 21, the preparation of 3-bis(2-benzimidazolyl)-2-oxapropane

[0047] Take 10.8g of o-phenylenediamine and 7g of diglycolic acid, mix and dissolve them in 120ml of hydrochloric acid solution with a concentration of 6mol / L, stir mechanically, and reflux at 90°C for 12h. After the system is cooled, adjust the pH with ammonia water value until the solution is weakly alkaline, cool, dry, and recrystallize (50mL×3 times) with water-acetone (volume ratio 1:1) to obtain the target product in white powder form, which is 1,3-bis(2-benzene and imidazolyl)-2-oxapropane.

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PUM

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Abstract

The invention provides a negative photoresist stripper composition which comprises a polyol mixture, quaternary ammonium hydroxide salt, sodium alcohol, morpholine, a surfactant, a water-soluble organic solvent, a corrosion inhibitor mixture, organic amine and deionized water. The negative photoresist stripper composition is excellent in stripping a photoresist layer, does not result in etching to metal wiring materials, and shows a great advantage in the manufacturing process of semiconductor circuit elements.

Description

technical field [0001] The present invention relates to the technical field of printed circuit board lithography, in particular to a negative-type photoresist stripper composition for stripping negative-type photoresist after the development process, and further relates to a method for removing metal wiring used for patterning When the photoresist is used, it can reduce the corrosion of the metal wiring, and can achieve a negative photoresist stripping agent composition with excellent stripping effect. Background technique [0002] Photoresist is an essential substance in the photolithography process, and the photolithography process is generally used in semiconductor devices such as integrated circuits, large-scale integrated circuits, and ultra-large-scale integrated circuits, as well as image display devices such as liquid crystal displays and flat panel displays. manufacture. [0003] The photoresist removal techniques on the substrate are: wet stripping, which uses che...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 刘超
Owner 刘超
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