Method for preparation of silicon nitride bonded silicon carbide refractory material by using silicon cutting waste mortar

Abstract

The invention discloses a method for preparation of silicon nitride bonded silicon carbide refractory material by using silicon cutting waste mortar, and the method comprises the following steps: (1), preparing raw materials, wherein the raw materials including, by weight, 5%-20% of the silicon cutting waste mortar, 50%-80% of silicon carbide, 2%-20% of silicon nitride and 1%-10% of alumina; (2), adding the raw materials into absolute ethanol for wet ball milling; (3), drying the raw materials treated by the wet ball milling; (4), adding PVA (polyvinyl acetate) to the dried raw materials for granulation to prepare blank, wherein the mass of the added PVA being 3%-8% of the mass of the raw materials; and (5), sintering the blank in air atmosphere into the silicon nitride bonded silicon carbide refractory material. The method can realize full utilization of the silicon cutting waste mortar, has no secondary pollution, also does not need the protection of nitrogen, and only needs an electric furnace for heating in the air atmosphere to prepare the low-volume-density and high-flexure-strength silicon nitride bonded silicon carbide refractory material, and can reduce environment pressure, turn waste into treasure, reduce the production cost and realize industrialized production.

Description

technical field [0001] The invention relates to a method for recycling silicon cutting waste mortar, in particular to a method for preparing refractory materials by using silicon cutting waste mortar. Background technique [0002] With the massive consumption and utilization of non-renewable energy, the global energy is increasingly tense, and solar energy, as a permanent energy source, has gradually become the most important new energy source for mankind, and the solar photovoltaic industry has developed rapidly in the world. When preparing solar cells, it is necessary to cut the single silicon body into silicon wafers that meet the requirements. At present, crystalline silicon is mainly completed by multi-wire cutting technology. Generally, a cutting machine produces hundreds of tons of cutting waste slurry every year. With the rapid development of my country's solar photovoltaic industry, the cutting waste is also increasing rapidly, which not only brings great pressure t...

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Problems solved by technology

However, the method disclosed in this patent application is still limited to the preparation of silicon nitride under a nitrogen atmosphere. At the same time, this

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