Bi85Sb15-xKx (Kalium mixed with bismuth-antimony) low-temperature thermoelectric material and preparing method thereof
A technology of bi85sb15-xkx and thermoelectric materials, which is applied in the field of Bi85Sb15-xKx low-temperature thermoelectric materials and their preparation, and semiconductor materials for thermoelectric refrigerators, can solve the problems of poor mechanical processing performance, high cost, and long single crystal preparation cycle, and achieve Ease of popularization and application, simple manufacturing process, and excellent thermoelectric performance
Inactive Publication Date: 2014-02-12
ZUNYI NORMAL COLLEGE
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Problems solved by technology
[0005] At 80 K, its figure of merit can reach 6.5×10 -3 K -1 . Both Bi and Sb are semi-metallic materials with the same rhombohedral crystal structure and similar lattice parameters. The physical properties of Bi-Sb alloys are related to the content of Sb. At 01-x Sb x The alloy behaves as a semi-metal, it is an n-type semiconductor at 0.070.22. However, the preparation cycle of single crystal is long, the machining performance is relatively poor, and the cost is high, which is not conducive to large-scale industrial production
It can be seen that there is a lack of a thermoelectric material with high mechanical strength and good performance in the low temperature range in the prior art
Method used
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Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0019] Embodiments of the present invention are achieved through the following technical solutions:
[0020] Bi provided by the present invention 85 Sb 15-x K x The thermoelectric material, wherein x represents any number from 1 to 4, is produced by mechanical alloying plus plasma sintering. Its chemical raw materials are pure bismuth, antimony, potassium elemental elements and high-purity argon.
[0021] Its preparation method comprises the following steps:
[0022] 1) Weigh metal bismuth, antimony, and potassium according to the mass ratio in the chemical formula, put them into a quartz tube, vacuumize, seal the tube, sinter at a temperature of 600 degrees for 10 hours, then mechanically pulverize the sintered block, put In a mechanical ball mill jar, the vacuum degree is 2×10 -3 Pa filled with pure argon, ball milled for 50 hours;
[0023] 2) Put the powder after mechanical ball milling into a carbon mold with a diameter of 12mm, and sinter it by plasma spark, and pre...
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The invention discloses a Bi85Sb15-xKx (kalium mixed with bismuth-antimony) low-temperature thermoelectric material and a preparing method thereof, wherein x in the formula represents any numerical value ranging from 1 to 4. The low-temperature thermoelectric material is prepared by chemically matching 5N parts of Bi, 5N parts of Sb and 5N parts of K and adopting a mechanical alloying and plasma spark sintering technology. The low-temperature thermoelectric material has good thermoelectric properties near the temperature of 200K, has the advantages of being high in mechanical strength, good in thermal electromotive force and electrical conductivity and has high quality when being placed at the low-temperature environment. The low-temperature thermoelectric material is stable in performance, simple in preparing technology, low in cost and easy to popularize and apply.
Description
field of invention [0001] The invention relates to the field of thermoelectric materials, in particular to a Bi 85 Sb 15-x K x A low-temperature thermoelectric material and a preparation method thereof, which are applied to a semiconductor material of a thermoelectric cooler. Background technique [0002] Rapid economic growth has made energy and environmental issues the most severe challenges facing mankind in the new century. The development of environmentally friendly and clean energy technologies is an important basis for maintaining the sustainable and rapid development of national economy and social production. The main areas of semiconductor thermoelectric materials include: thermoelectric power generation devices, Peltier refrigeration devices and temperature sensors. Usually, the figure of merit parameter Z is used to describe the efficiency of thermoelectric refrigeration, Z=α2σ / λ, α is the thermoelectric coefficient, σ is the electrical conductivity of the mate...
Claims
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Login to View More IPC IPC(8): H01L35/18H01L35/34
Inventor 宋春梅李来风
Owner ZUNYI NORMAL COLLEGE