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Liquid-phase preparation method of cuprous sulfide film

A technology of cuprous sulfide and thin film, which is applied in the direction of copper sulfide, etc., can solve the problems of chemical method film introducing impurities, not suitable for large-scale production, poor experiment repeatability, etc., and achieve the effect of low cost, simple equipment and excellent quality

Active Publication Date: 2014-03-05
山东中科泰阳光电科技有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the physical method requires expensive vacuum equipment, and the production cost is high; the gas phase method is limited in large-scale preparation and is not suitable for mass production; the chemical method is easy to introduce impurities into the film, and the experimental repeatability is poor.

Method used

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  • Liquid-phase preparation method of cuprous sulfide film

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preparation example Construction

[0025] The invention provides a liquid-phase preparation method of a cuprous sulfide thin film. First, an organic precursor solution containing copper and sulfur is synthesized, a precursor thin film is deposited by a non-vacuum liquid-phase film-making technology, and finally annealed to form a cuprous sulfide thin film. The method is simple and convenient to operate, does not introduce anion impurities, uses simple equipment, has low cost, good process repeatability, and is suitable for large-scale production. Specifically, as an example, the method of the present invention may include the following steps.

[0026] First, the copper source is dissolved in an alcohol solution containing a complexing agent and a sulfur-containing small molecule reagent, and if necessary, a certain viscosity regulator is added to form a clear, transparent and stable precursor solution.

[0027] Wherein, the copper source may be one or a mixture of two or more of copper oxide, cuprous oxide, cop...

Embodiment 1

[0042] First, 1 mmol of cuprous oxide was dissolved in 10 mL of a mixed solution of thioacetic acid, ethanolamine, propylene glycol, and isopropanol, wherein the ratio of thioacetic acid, ethanolamine, propylene glycol, and isopropanol was 2:0.5:1:6.5. Stir at room temperature to obtain a clear and transparent precursor solution;

[0043] Secondly, the precursor film was deposited by spin coating and dried on a 300°C heating plate;

[0044] Finally, anneal the precursor film at 500° C. for 30 minutes in a sulfur atmosphere to obtain a cuprous sulfide film. figure 1 A scanning electron microscope (SEM) photo of the cuprous sulfide film is shown, and it can be seen from the figure that the cuprous sulfide film is uniformly distributed and of excellent quality.

Embodiment 2

[0046] First, 2 mmol of copper oxide was dissolved in 10 mL of a mixed solution of thioacetic acid, diethanolamine, and ethanol, wherein the ratio of thioacetic acid, diethanolamine, and ethanol was 2:1:7. Stir at room temperature to obtain a clear and transparent precursor solution;

[0047] Second, the precursor film was deposited by spin coating and dried on a 350°C heating plate;

[0048]Finally, anneal the precursor film at 500° C. for 30 minutes in a sulfur atmosphere to obtain a cuprous sulfide film.

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Abstract

The invention relates to a liquid-phase preparation method of a cuprous sulfide film. The method comprises the following steps: dissolving a copper source into an alcoholic solution containing a complexing agent and a small molecule sulfur reagent; adding a certain of viscosity modifier, so as to form a clear, transparent and stable precursor solution; depositing the precursor solution into a precursor film on a substrate by a non-vacuum film deposition technology, and heating and baking; annealing the precursor film at 300-650 DEG C under atmosphere of sulfur group elements for 20-200 minutes, so as to form the cuprous sulfide film. Copper oxide, cuprous oxide, copper hydroxide and / or copper acetylacetonate are taken as copper sources, anionic impurities are not introduced to the film, and the complexing agent, the viscosity modifier and the like are added, so that the precursor solution is clear, transparent and stable. Thus, the preparation process can be operated in air, and the formed film is even in distribution and excellent in quality.

Description

technical field [0001] The invention mainly relates to the field of preparation methods of semiconductor thin films, in particular to the liquid-phase preparation technology of cuprous sulfide thin films. Background technique [0002] In the past few decades, transition metal chalcogenides have attracted extensive attention due to their excellent electrical, magnetic, and optical properties. Cuprous sulfide is a typical transition metal chalcogenide. Cuprous sulfide is a p-type semiconductor material with an indirect band gap of 1.2eV and a direct band gap of 1.8eV, and has potential applications in solar cells, nanoelectronic devices, lithium-ion batteries, and chemical sensors. [0003] At present, many cuprous sulfide nanocrystals with different shapes have been synthesized, such as flower shape, spherical shape, nanowire, nanorod, nanodisk and so on. Although there are many methods for synthesizing cuprous sulfide nanocrystals with different morphologies, there are sti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/12
Inventor 黄富强谢宜桉刘玉峰陈海杰王耀明
Owner 山东中科泰阳光电科技有限公司
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