Manufacturing method of bipolar IC structure for realizing Schottky diode and bipolar IC structure
A technology of Schottky diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve the problems of increasing the number of photolithography, expensive, complex processes, etc., to achieve reduced production costs and compatible production processes , The effect of simplifying the process
Active Publication Date: 2016-11-23
CRM ICBG (WUXI) CO LTD
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Problems solved by technology
Increasing the number of photolithography will increase the cost of the chip, and special metals such as titanium, platinum and palladium are also expensive
Using this method to make Schottky diodes, the process is complicated and the cost of the manufacturing process is high
Method used
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[0042] In order to understand the technical aspects of the present invention more clearly, the following examples are given in detail.
[0043] see figure 1 Shown is a flow chart of the steps of the manufacturing method of the bipolar integrated circuit structure realizing the Schottky diode function of the present invention.
[0044] In one embodiment, the method comprises the steps of:
[0045] (1) Generate the substrate, the N buried layer and the P buried layer in the substrate, the epitaxial layer on the substrate, and the upper isolation layer and deep phosphorus layer in the epitaxial layer;
[0046] (2) forming N wells, base regions and P-layers in the epitaxial layer by quasi-isoplanar technology, and annealing;
[0047] (3) generate the emitter region on the deep phosphorus layer by pre-deposition and re-diffusion;
[0048] (4) forming a Schottky contact hole located in the base region by one etching;
[0049] (5) Evaporating aluminum to form a silicon compound S...
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The invention relates to a manufacture method for realizing a bipolar IC (integrated circuit) structure of a Schottky diode and the bipolar IC structure, and belongs to the technical field of semiconductors. The method comprises the steps of forming an N well, a base region and a P-layer of an epitaxial layer through a directrix isoplane technology, forming a Schottky contact hole through primary etching, and finally evaporating aluminum, so as to form a silicon compound Schottky barrier layer in the Schottky contact hole. The method ensures that the technology does not require additional Schottky contact photoetching, and noble metal, such as titanium, platinum, palladium and the like, simultaneously keeps the stability and the repeatability of a Schottky barrier formed by the noble metal, such as titanium, platinum, palladium and the like, is compatible with the universal bipolar IC production technology, effectively simplifies the technical process, and reduces the production cost, and the method and the structure have a wide application range.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to the technical field of bipolar integrated circuit production technology, and specifically refers to a method for manufacturing a bipolar IC structure of a Schottky diode and a bipolar IC structure. Background technique [0002] Diodes made of metal and semiconductor rectifying contact characteristics are called Schottky barrier diodes, which have a similar current and voltage relationship to PN junction diodes, that is, they all have unidirectional conductivity. Generally, metal and lightly doped N-type silicon contacts are used to make Schottky diodes. The characteristics of this Schottky diode depend on several factors, including metal composition, silicon doping, edge effects, annealing conditions, and the presence of surface contamination. [0003] In the design of bipolar integrated circuits, in order to save costs, it is necessary to integrate the general external S...
Claims
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IPC IPC(8): H01L21/331H01L29/73
CPCH01L29/66143H01L29/872
Inventor 陈冠峰张骁宇卜慧琴
Owner CRM ICBG (WUXI) CO LTD