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Method for preparing and transferring magnetic nanometer array

A magnetic nano and transfer method technology, applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of unformed transfer and bonding process, and achieve the effect of meeting the manufacturing requirements, simple process and convenient operation

Inactive Publication Date: 2014-04-09
河南省科学院应用物理研究所有限公司
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AI Technical Summary

Problems solved by technology

Existing methods pay more attention to the preparation process of the magnetic nanowire array itself, and have not formed a reliable transfer and bonding process

Method used

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  • Method for preparing and transferring magnetic nanometer array

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Embodiment Construction

[0009] As shown in the figure, the main steps of the specific embodiment of the present invention include:

[0010] (1) Anneal the aluminum sheet with a purity of 99.999% at 500°C for 30 minutes, then electrochemically polish it in an ethanol solution of perchloric acid until it is bright, place it in a 0.6mol / L sulfuric acid solution, and use a voltage of 20V for one time Oxidation, the oxidation time is 1 hour, then put the aluminum sheet into the mixed solution of phosphoric acid and chromic acid with a mass ratio of 6% and 1.8% respectively, in a water bath at 60°C for 20 minutes, take it out and wash it with distilled water several times, and then repeat it for two times. After secondary oxidation for 2 hours, a non-perforated alumina template 1 with a pore diameter of 50 nm and a depth of 20 μm was obtained as shown in Figure (a).

[0011] (2) Put the deposited sample into the magnetron sputtering table, use FeNi alloy target, and keep the vacuum at 3*10- 5 Pa, forming ...

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Abstract

The invention provides a method for preparing a magnetic nanometer array and transferring the magnetic nanometer array to a metal substrate. The method includes the steps that a secondary anode oxidation method is utilized to prepare an aluminum oxide porous die plate which is not through, magnetic nano materials are deposited in holes of the die plate, the length of a deposited nanowire is controlled to make a certain unfilled depth reserved in the holes of the die plate, metal is deposited on the surface of the die plate, a continuous metal film with the nano holes is formed, thermocompression bonding is conducted on the continuous metal film and the metal substrate under certain temperature and pressure, and eventually the die plate is dissolved, and the goal of transferring the magnetic nanowire to the metal substrate is achieved. The method is simple in process and convenient to operate, compatible with the micro-electronic processing process, particularly, low-temperature bonding is achieved by the utilization of the nanoscale effect of a formed porous nanometer metal film layer, and the method has wide application prospect in the field of manufacturing of magnetic sensors based on a micro electro mechanical system.

Description

technical field [0001] The invention belongs to the field of microelectromechanical system (MEMS) manufacturing, in particular to a method for preparing a magnetic nanometer array compatible with microelectronic processing technology. Background technique [0002] With the development of the Internet of Things technology, various high-performance magnetic sensors play an increasingly important role in the fields of automobiles, biology, aerospace, automation, etc., especially the magnetic sensor manufacturing technology based on MEMS technology, which has small size, sensitivity and integration Advanced advantages will become the future development trend. The key process of MEMS magnetic sensor manufacturing is to form magnetic sensitive elements. Electrochemical or sputtering methods are commonly used to deposit patterned magnetic thin films, but there is still a lot of room for improvement in its performance indicators. Considering the one-dimensional characteristics of n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 赵兰普宋晓辉岳鹏飞庄春生乔彦超
Owner 河南省科学院应用物理研究所有限公司
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