Grinding particle system and polishing liquid for CMP (Chemical Mechanical Polishing)

Abstract

The invention discloses a grinding particle system and polishing liquid. The grinding particle system comprises organic particles, inorganic particles and a chemical solution, wherein the content of the organic particles is 3-10 times as much as that of the content of the inorganic particles. According to the grinding particle system, the control of a mixing ratio and the distribution of the particles is carried out so that the content of the inorganic particles in the grinding particle system is greatly reduced, and furthermore, the surface scratches and the particle residues caused by polishing are reduced; the shape of the organic particles is designed so as to enlarge the contact area of the particles in a polishing process and improve the polishing efficiency. The respective advantages of the inorganic particles and the organic particles are sufficiently expressed; the preparation process is simple and the manufacturing cost is low; the grinding particle system is particularly suitable for a surface polishing process of materials with ultra-low k values and metal materials with low rigidity, such as copper and aluminum.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to an abrasive particle system and a polishing liquid for CMP. Background technique [0002] Chemical Mechanical Polishing (CMP) is one of the important processes in semiconductor manufacturing. It achieves global flatness of the wafer surface by grinding and removing materials from semiconductor materials, insulating materials and metal materials with patterned wafer surfaces. A process of chemicalization. During the polishing process, the wafer to be polished is fixed on the polishing carrier, and the polishing liquid with abrasive particles and chemical solution is applied on the polishing pad, and the chemical substance in the polishing liquid oxidizes the material on the surface of the wafer to form a softer oxide layer. Then, through the contact friction between the polishing pad, the abrasive particles in the polishing liquid and the wafer, the oxide...

AI Technical Summary

Problems solved by technology

For example, Chinese patent application CN1616573A discloses that inorganic particles are adsorbed to the surface of organic resin particles (such as Figure 2A ), but its process is complex, and the distribution of inorganic particles on the surface of organic particles is difficult to control; and the Chinese patent application CN1982400A discloses that organic nanoparticles are used as the core, and a cerium oxide shell is formed on the surface of the organic particles through solution reaction to form a composite abrasive ( like Figure 2B ), but its production cost is high

The preparation process of this type of composite abrasive particles is complex and the production cost is high

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