Photochemical preparation method of semiconductor/graphene oxide hollow sphere compound photo-catalyst

A photocatalyst and semiconductor technology, which is applied in the field of photochemical preparation of semiconductor/graphene oxide hollow sphere composite photocatalyst, can solve problems affecting performance and achieve low cost, large specific surface area, and mild reaction conditions

Active Publication Date: 2014-04-30
SOUTH CHINA NORMAL UNIVERSITY
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the use of graphene / graphene oxide, graphene is usually dispersed in the solution system, and it is inevitable that there will be partial agglomeration, covering some of its functional groups, and affecting its performance.
Not only that, the current problem of nanoparticle agglomeration is also the bottleneck of the development of nanomaterials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photochemical preparation method of semiconductor/graphene oxide hollow sphere compound photo-catalyst
  • Photochemical preparation method of semiconductor/graphene oxide hollow sphere compound photo-catalyst

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0027] A photochemical preparation method of semiconductor / graphene oxide hollow sphere composite photocatalyst, comprising the following steps:

[0028] 1) Mix the soluble salt of the semiconductor photocatalyst, sodium thiosulfate, and water evenly to make a precursor solution;

[0029] 2) Add graphite oxide into water and ultrasonically obtain a graphene oxide dispersion;

[0030] 3) adding polymer microspheres to the above graphene oxide dispersion, and fully mixing and dispersing to obtain a mixed dispersion system containing polymer microspheres;

[0031] 4) Add the mixed dispersion system containing polymer microspheres obtained in the previous step to the precursor solution obtained in step 1), and stir to obtain a mixed solution;

[0032] 5) Transfer the mixed solution and place it under the ultraviolet light source for sufficient irradiation to form a precipitate;

[0033] 6) Fully soak the obtained precipitate with an organic solvent to obtain an insoluble solid; ...

Embodiment 1

[0046] A photochemical preparation method of a semiconductor / graphene oxide hollow sphere composite photocatalyst, comprising the steps of:

[0047] 1) Dissolve 2g of cadmium sulfate and 2g of sodium thiosulfate in 50ml of deionized water and stir magnetically for 30 minutes to obtain the precursor solution;

[0048] 2) Add 10 mg of graphite oxide into deionized water, and ultrasonically peel off the graphite oxide for 30 minutes to obtain a graphene oxide dispersion; in the graphene oxide dispersion, the mass percentage of graphene oxide is 0.03%;

[0049] 3) Add polystyrene microspheres to the above-mentioned graphene oxide dispersion and sonicate for 5 minutes to obtain a graphene oxide-coated sphere solution. In the graphene oxide-coated sphere solution, the mass concentration of polystyrene microspheres is 0.5%;

[0050] 4) Add the solution obtained in the previous step to the precursor solution, add water to a total volume of 100ml, and stir magnetically for 30 minutes ...

Embodiment 2

[0055] A photochemical preparation method of a semiconductor / graphene oxide hollow sphere composite photocatalyst, comprising the steps of:

[0056]1) Weigh 2g of copper sulfate and 4g of sodium thiosulfate and dissolve them in 100ml of deionized water, stir magnetically for 30 minutes to obtain the precursor solution;

[0057] 2) Add 8 mg of graphite oxide into deionized water, and ultrasonically peel the graphite oxide for 30 minutes to obtain a graphene oxide dispersion; in the graphene oxide dispersion, the mass percentage of graphene oxide is 0.03%;

[0058] 3) Add the cross-linked styrene / acrylamide copolymer microspheres to the above graphene oxide dispersion and sonicate for 10 minutes to obtain a graphene oxide coated ball solution. In the graphene oxide coated ball solution, cross-linked styrene The mass concentration of ethylene / acrylamide copolymerized microspheres is 0.05%;

[0059] 4) Add the solution obtained in the previous step to the precursor solution, add ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a photochemical preparation method of a semiconductor / graphene oxide hollow sphere compound photo-catalyst. The photochemical preparation method comprises the steps of (1), evenly mixing soluble salt of a semiconductor photo-catalyst, sodium thiosulfate and water to prepare a precursor solution; (2), adding graphite oxide into the water and performing ultrasound treatment to obtain a graphene oxide dispersion solution; (3), adding polymer microspheres into the graphene oxide dispersion solution, and fully mixing and dispersing to obtain a mixed and dispersed system containing the polymer microspheres; (4), adding the mixed and dispersed system containing the polymer microspheres into the precursor solution, and stirring to obtain a mixed solution; (5), transferring the mixed solution to the place under an ultraviolet source, and fully irradiating to generate sediment; (6), fully immersing the sediment by using an organic solvent to obtain insoluble solid; and (7), taking out the insoluble solid, washing, drying and grinding to obtain the product.

Description

technical field [0001] The invention relates to a photochemical preparation method of a semiconductor / graphene oxide hollow sphere composite photocatalyst. Background technique [0002] The development of photosynthetic technology has been very rapid in recent years, and it has been applied on a large scale in many fields, and has a growing momentum. In chemical synthesis, photochemistry is more selective and specific than thermochemistry, and the photochemical synthesis method is simple, cheap, environmentally friendly, and has better operability and practicability. [0003] Photocatalytic technology is a treatment technology that does not affect the environment. It has the characteristics of simple process, low energy consumption, easy control of operating conditions and thorough degradation of pollutants. It is suitable for the treatment of various wastewater and waste dyes, etc. It is considered to have Environmentally friendly new technologies with good development pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/06B01J23/72B01J35/08B01J37/34
Inventor 孙丰强左燕冰许适溥黄志坚陈禾
Owner SOUTH CHINA NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products