Preparation method of IGZO (Indium Gallium Zinc Oxide) target

Abstract

The invention relates to a preparation method of a target, in particular to a preparation method of a high-performance IGZO (Indium Gallium Zinc Oxide) target. The method comprises the following steps of: (1) uniformly ball-milling and mixing Ga2O3 nano-powder, ZnO nano-powder and In2O3 nano-powder at an atomic ratio In:Ga:Zn of 1:(1-5):(1-5) to form IGZO powder, adding PVA (Polyvinyl Acetate) accounting for 1-5% of the mass of the IGZO powder for granulation, (2) loading the IGZO powder into a mold for compression molding at 40-80MPa, performing secondary moulding on a biscuit moulded for the first time at 200-300 MPa, releasing pressure at 4-8MPa / min to the ordinary pressure, then taking out a moulded biscuit, and (3) putting the biscuit in a sintering furnace for sintering: heating to 1300-1550 DEG C at a heating rate of less than 1 DEG C / min, holding, and sintering for 4-10h, then cooling to 950-1050 DEG C at a cooling rate of 0.5-1 DEG C / min, then naturally cooling, and obtaining the IGZO target. The method can prepare the high-performance IGZO target (high density, relative density greater than 98%, and high conductivity), and fills in the blank of producing and fabricating the high-performance IGZO target domestically.

Description

technical field [0001] The invention relates to a method for preparing a target, in particular to a method for preparing a high-performance IGZO target. Background technique [0002] Semiconductor materials composed of In (indium), Ga (gallium), Zn (zinc), and O (oxygen) are used in transistors (TFT: thin-film transistors) for driving pixels in liquid crystal displays and organic EL displays, which can greatly reduce the cost of these displays. power consumption. Traditional polysilicon thin film transistors have poor uniformity and complex manufacturing process; metal oxide IGZO TFT has high mobility, good uniformity, transparency, and simple manufacturing process, which can better meet the needs of large-size liquid crystal displays and active organic electroluminescence. . Since the electron mobility of IGZO is about 20 to 50 times that of a-Si TFT, the utilization rate of backlight is improved, so the resolution can be more than 2 times that of ordinary TFT screens. I...

AI Technical Summary

Problems solved by technology

[0003] The existing IGZO target preparation method is mainly to prepare IGZO powder by co-precipitation method, and then granulate, press and sinter to obtain IGZO target material. When the precipitation cannot be carried out at the same time, sufficient precipitation cannot be guaranteed, resulting in an improper proportion of ingredients, resulting in unstable characteristics of the powder and low activity of the powder. Therefore, the target fired from the IGZO powder obtained by this method The relative density is low, basically 90-95%, and it is impossible to obtain high relative density IGZO targets (relative density>98%)