A kind of organic electroluminescent device and preparation method thereof
An electroluminescence device and electroluminescence technology, which are applied in the manufacturing of organic semiconductor devices, electric solid state devices, semiconductor/solid state devices, etc., to achieve the effect of prolonging the life of the device, high density, and improving the life of the device.
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Embodiment 1
[0048] A method for preparing an organic electroluminescent device, comprising the following steps:
[0049] (1) Pre-treatment of ITO conductive glass substrate 1: put ITO conductive glass substrate 1 into acetone, ethanol, deionized water, and ethanol in sequence, ultrasonically clean them for 5 minutes, then blow dry with nitrogen, and dry them in an oven for later use; The cleaned ITO glass substrate 1 is subjected to surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function on the surface of the conductive layer; the thickness of the ITO conductive glass substrate 1 is 100nm;
[0050] (2) Preparation of functional layer and light-emitting layer:
[0051] Hole injection layer 2: Evaporate MoO on the ITO conductive glass substrate 1 3 Hybrid material obtained by doping NPB, MoO 3 The doping mass fraction is 30%, and the evaporation is carried out by high-vacuum coating equipment, and the vacuum degree during e...
Embodiment 2
[0065] A method for preparing an organic electroluminescent device, comprising the following steps:
[0066] (1), (2), (3) are the same as embodiment 1;
[0067] (4) Preparation of protective layer: NPB was prepared on the cathode layer by vacuum evaporation with a vacuum degree of 5×10 -5 Pa, the evaporation rate is The thickness is 300nm;
[0068] (5) Preparation of oxide layer: The oxide layer is prepared on the protective layer by magnetron sputtering, and the material of the oxide layer is Al 2 o 3 , the sputtering target is Al 2 o 3 , the incoming gas is Ar, the gas flow rate is 15 sccm, and the background vacuum is 2×10 -4 Pa, the thickness is 150nm;
[0069] (6) Preparation of the hydrosulfide layer: the hydrosulfide layer was prepared on the oxide layer by reactive sputtering, and the material of the hydrosulfide layer was MoS 2 : H, the sputtering target is MoS 2 , into NH 3 Mixed gas with Ar, NH 3 The volume fraction of the mixed gas is 1%, the gas flow ...
Embodiment 3
[0074] A method for preparing an organic electroluminescent device, comprising the following steps:
[0075] (1), (2), (3) are the same as embodiment 1;
[0076] (4) Preparation of protective layer: prepare Alq on the cathode layer by vacuum evaporation 3 , the vacuum degree is 8×10 -5 Pa, the evaporation rate is The thickness is 250nm;
[0077] (5) Preparation of oxide layer: The oxide layer is prepared on the protective layer by magnetron sputtering, and the material of the oxide layer is TiO 2 , the sputtering target is TiO 2 , the incoming gas is Ar, the gas flow rate is 11sccm, and the background vacuum is 1×10 -3 Pa, the thickness is 80nm;
[0078] (6) Preparation of the hydrosulfide layer: The hydrosulfide layer was prepared on the oxide layer by reactive sputtering, and the material of the hydrosulfide layer was TaS 2 : H, the sputtering target is TaS 2 , into NH 3 Mixed gas with Ar, NH 3 The volume fraction of the mixed gas is 5%, the gas flow rate is 11scc...
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