Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Epitaxial growth method of purple-light LED

An epitaxial growth and violet light technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency, high manufacturing cost, low yield of violet LED chips, etc., achieve good current diffusion, reduce growth difficulty, improve The effect of reliability

Inactive Publication Date: 2014-06-25
西安利科光电科技有限公司
View PDF2 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the epitaxial growth technology of purple light LED is not mature enough. On the one hand, it is restricted by the characteristics of the purple light growth material, and on the other hand, due to the influence of the energy band structure of the purple light LED, the luminous efficiency of the current purple light LED chip is low, the preparation cost is high, and the difficulty is great. , low yield, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial growth method of purple-light LED
  • Epitaxial growth method of purple-light LED
  • Epitaxial growth method of purple-light LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The present invention will be further elaborated below in conjunction with the accompanying drawings.

[0045] The present invention uses sapphire as the growth substrate for heterogeneous epitaxial growth, using metal organic compound chemical vapor deposition (MOCVD) epitaxial growth technology, using trimethylgallium (TMGa), triethylgallium (TEGa), and trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia (NH3) silane (SiH 4 ) and magnesocene (cp2mg) provide gallium source, indium source, aluminum source, nitrogen source, silicon source and magnesium source for growth respectively. The specific main growth stages are as follows:

[0046] 1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0047] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 200 torr.

[0048] 3. Raise the temperature to 1070°C to grow an intri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an epitaxial growth method of a purple-light LED. The suitable wavelength range of the method is 365-420 nm, the growth difficulty of the purple-light LED can be greatly lowered, meanwhile, the radiation power of the purple-light LED can be increased and the reliability of purple-light LED devices is effectively improved. In the epitaxial growth method, an n-type AlGaN / GaN super lattice structure is adopted, potential-barrier-layer AlGaN and potential-well-layer GaN are doped alternately periodically, and therefore concentration of n-type carriers can be concentrated; the concentration of different layers change periodically, and periodic conductance changes enable currents to be diffused better; meanwhile, the conductance changing area is widened, so that the transmitting effect of an electric leakage channel with linear defects is weakened, forward voltage can be lowered, and ESD can be improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric device material preparation and structure design, and in particular relates to an epitaxial growth method of a violet LED. Background technique [0002] With the advancement of science and technology and the development of new energy sources, solid-state LED lighting will become the trend of lighting in the future world. Due to the advantages of energy saving, environmental protection, safety, long life, low consumption, and low heat, LEDs have been widely used in traffic lights, traffic lights, etc. Signal lights, landscape decorative lights, display screens, car tail lights, mobile phone backlights and other fields. At present, the LEDs on the market are mainly blue-green light, followed by red and yellow light. There are relatively few purple and ultraviolet LED products, mainly because purple LEDs are difficult to manufacture and have low luminous efficiency. With the development of LED...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0066H01L33/0075H01L33/06H01L33/32
Inventor 王晓波
Owner 西安利科光电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com