Epitaxial growth method of purple-light LED

An epitaxial growth and violet light technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency, high manufacturing cost, low yield of violet LED chips, etc., achieve good current diffusion, reduce growth difficulty, improve The effect of reliability

Inactive Publication Date: 2014-06-25
西安利科光电科技有限公司
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[0003] At present, the epitaxial growth technology of purple light LED is not mature enough. On the one hand, it is restricted by the characteristics of the purple light growth material, and on the other hand, due t

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  • Epitaxial growth method of purple-light LED
  • Epitaxial growth method of purple-light LED

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[0044] The present invention will be further elaborated below in conjunction with the accompanying drawings.

[0045] The present invention uses sapphire as the growth substrate for heterogeneous epitaxial growth, using metal organic compound chemical vapor deposition (MOCVD) epitaxial growth technology, using trimethylgallium (TMGa), triethylgallium (TEGa), and trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia (NH3) silane (SiH 4 ) and magnesocene (cp2mg) provide gallium source, indium source, aluminum source, nitrogen source, silicon source and magnesium source for growth respectively. The specific main growth stages are as follows:

[0046] 1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0047] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 200 torr.

[0048] 3. Raise the temperature to 1070°C to grow an intri...

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Abstract

The invention provides an epitaxial growth method of a purple-light LED. The suitable wavelength range of the method is 365-420 nm, the growth difficulty of the purple-light LED can be greatly lowered, meanwhile, the radiation power of the purple-light LED can be increased and the reliability of purple-light LED devices is effectively improved. In the epitaxial growth method, an n-type AlGaN/GaN super lattice structure is adopted, potential-barrier-layer AlGaN and potential-well-layer GaN are doped alternately periodically, and therefore concentration of n-type carriers can be concentrated; the concentration of different layers change periodically, and periodic conductance changes enable currents to be diffused better; meanwhile, the conductance changing area is widened, so that the transmitting effect of an electric leakage channel with linear defects is weakened, forward voltage can be lowered, and ESD can be improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric device material preparation and structure design, and in particular relates to an epitaxial growth method of a violet LED. Background technique [0002] With the advancement of science and technology and the development of new energy sources, solid-state LED lighting will become the trend of lighting in the future world. Due to the advantages of energy saving, environmental protection, safety, long life, low consumption, and low heat, LEDs have been widely used in traffic lights, traffic lights, etc. Signal lights, landscape decorative lights, display screens, car tail lights, mobile phone backlights and other fields. At present, the LEDs on the market are mainly blue-green light, followed by red and yellow light. There are relatively few purple and ultraviolet LED products, mainly because purple LEDs are difficult to manufacture and have low luminous efficiency. With the development of LED...

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Application Information

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IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0066H01L33/0075H01L33/06H01L33/32
Inventor 王晓波
Owner 西安利科光电科技有限公司
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