Preparing method for double-layer high-entropy alloy diffusion barrier layer

A high-entropy alloy and barrier layer technology, used in coatings, metal material coating processes, ion implantation plating, etc. Reduce energy consumption and save the effect of sputtering

Inactive Publication Date: 2014-08-06
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Utilize the good adhesion between HEAs and Cu to improve the bonding performance of the diffusion barrier layer and Cu, and solve the problem of the relatively poor adhesion between traditional nitrides and Cu, which leads to a decrease in the stability of the interconnection system

Method used

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  • Preparing method for double-layer high-entropy alloy diffusion barrier layer
  • Preparing method for double-layer high-entropy alloy diffusion barrier layer
  • Preparing method for double-layer high-entropy alloy diffusion barrier layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] (1) Place the N-type single crystal Si substrate with a crystal orientation of [100] in acetone and then in absolute ethanol for about 20 minutes of ultrasonic cleaning, and take it out and dry it for later use;

[0052] (2) Put the single crystal Si substrate cleaned in step (1) and the Ta target, Al target, and Cr target as the target material into the magnetron sputtering coating vacuum furnace, and place the Ni target sheet on the Cr target. The Ti target is placed on the Ta target, and the Ni target and the Ti target only occupy part of the Cr target and the Ta target; vacuumize the magnetron sputtering coating vacuum furnace to 4.0×10 -4 After Pa, Ar was introduced as the working gas, and the impurities in the single crystal Si substrate were removed by reverse sputtering cleaning. The power of reverse sputtering cleaning was 200W, and the bias voltage was -700V; Impurities, the power of pre-sputtering cleaning is 60W; the operating pressure of reverse sputtering ...

Embodiment 2

[0064] (1) Place the N-type single crystal Si substrate with a crystal orientation of [100] in absolute ethanol and then in acetone for about 30 minutes of ultrasonic cleaning respectively, and take out and dry for later use after thorough cleaning;

[0065] (2) Put the single crystal Si substrate cleaned in step (1) and the Ta target, Al target, and Cr target as the target material into the magnetron sputtering coating vacuum furnace, and place the Ni target sheet on the Cr target. The Ti target is placed on the Ta target, and the Ni target and the Ti target only occupy part of the Cr target and the Ta target; vacuumize the magnetron sputtering coating vacuum furnace to 1.2×10 -4 After Pa, Ar was introduced as the working gas, and the impurities in the single crystal Si substrate were removed by reverse sputtering cleaning. The power of the reverse sputtering cleaning was 160W, and the bias voltage was -800V; Impurities, the power of pre-sputtering cleaning is 100W; the opera...

Embodiment 3

[0071] (1) Place the N-type single crystal Si substrate with a crystal orientation of [100] in acetone and absolute ethanol for about 25 minutes for ultrasonic cleaning respectively, take it out and dry it for later use after thorough cleaning;

[0072] (2) Put the single crystal Si substrate cleaned in step (1) and the Ta target, Al target, and Cr target as the target material into the magnetron sputtering coating vacuum furnace, and place the Ni target sheet on the Cr target. Place the Ti target on the Ta target, wherein the Ni target and the Ti target only occupy part of the position on the Cr target and the Ta target; vacuumize the magnetron sputtering coating vacuum furnace to 4.0×10 -4 After Pa, Ar was introduced as the working gas, and the impurities in the single crystal Si substrate were removed by reverse sputtering cleaning. The power of reverse sputtering cleaning was 240W, and the bias voltage was -700V; Impurities, the power of pre-sputtering cleaning is 80W; the...

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Abstract

The invention discloses a preparing method for a double-layer high-entropy alloy diffusion barrier layer. The method comprises the following steps: cleaning a single crystal Si base in an ultrasonic way; removing impurities in the single crystal Si base in an anti-sputtering cleaning way, and removing impurities in target materials and target sheets in a pre-sputtering cleaning way; depositing an HEANs thin film on the single crystal Si base in a sputtering way under the condition that the flow ratio of Ar to N is 1:(0.65-0.9); depositing an HEAs thin film on the ANs thin film in a sputtering way by using the Ar as the working gas when the thickness of the HEANs thin film reaches the designed thickness; adjusting the vacuum degree in a furnace to the degree not lower than 10-3 Pa when the thickness of the HEAs thin film reaches the designed thickness, and naturally cooling and releasing from the furnace to obtain the double-layer high-entropy alloy diffusion barrier layer. For the double-layer high-entropy alloy diffusion barrier layer obtained by the method, the method has the advantages that the bonding strength among the base, the Cu and the barrier layer is improved, and the whole heat stability of the diffusion barrier layer is improved. The method also has the characteristics of skillful technique for the preparing technology, low cost, low pollution and the like.

Description

technical field [0001] The application belongs to the technical field of semiconductor integrated circuit manufacturing technology, and in particular relates to a method for preparing a double-layer high-entropy alloy diffusion barrier layer for deep submicron VLSI Cu interconnect film systems. Background technique [0002] With the rapid development of ultra-large scale integration (ULSI) process technology, the feature size of integrated circuits continues to decrease, requiring the diffusion barrier layer to be as thin as possible while maintaining the diffusion barrier performance and thermal stability at high temperatures, which makes Al as a The problem of severely degraded device performance caused by the sharp increase in RC delay caused by interconnect materials is becoming more and more serious. Today, Cu has gradually replaced Al as a new generation of interconnect metal materials. However, although many physical properties of Cu itself have great advantages for ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/02
Inventor 汪渊石云龙张立东
Owner SICHUAN UNIV
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