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A kind of preparation method of grating structure transparent conductive film

A technology of transparent conductive film and grating structure, applied to the conductive layer on the insulating carrier, ion implantation plating, coating, etc., which can solve the problems of long preparation time period, uneven product shape and size, low preparation efficiency, etc. , to achieve the effects of reducing environmental pollution and personal safety hazards, shortening sample preparation time, and improving light transmittance

Active Publication Date: 2016-05-25
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the complicated preparation process of these methods, the long preparation time period required, and the addition of toxic and harmful chemical reagents in some cases, a series of problems such as complex operation process, low preparation efficiency, and easy pollution to the environment have been brought about.
In addition, the controllability is not easy to guarantee when using these methods to prepare transparent conductive film structures, and the shape and size of the obtained products are not uniform

Method used

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  • A kind of preparation method of grating structure transparent conductive film
  • A kind of preparation method of grating structure transparent conductive film
  • A kind of preparation method of grating structure transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Preparation of Ag / FTO transparent conductive film: directly use commercially available FTO glass (thickness 750nm, average transmittance 80%, sheet resistance 8.5Ω / sq) as the substrate, use the method of cleaning the glass substrate, wash and dry, and then use high Vacuum DC magnetron sputtering apparatus sputters the Ag layer (the purity of the Ag target is 99.99%), the sputtering current is 60mA, the sputtering time is 3 seconds, the sputtering gas is argon, and metal Ag is deposited on the FTO glass substrate film , to obtain Ag / FTO transparent conductive film for future use.

[0019] The Ag / FTO transparent conductive film grating structure is to scan the Ag / FTO transparent conductive film with a nanosecond laser with a pulse width of 1~2ns, a wavelength of 532nm, and a repetition rate of 1kHz. The method is as follows: adjust the position of the sample stage so that the surface of the Ag / FTO transparent conductive film is located at 2.5mm behind the laser focus; con...

Embodiment 2

[0021] Preparation of Pt / FTO transparent conductive film: directly use commercially available FTO glass (thickness about 750nm, average transmittance 80%, sheet resistance 8.5Ω / sq) as the substrate, use the method of cleaning the glass substrate, after cleaning and drying, use The Pt layer was sputtered by a high-vacuum DC magnetron sputtering apparatus (the purity of the Pt target was 99.99%), the sputtering current was 60 mA, the sputtering time was 4 seconds, and the sputtering gas was argon. Deposit the metal Pt layer on the FTO glass base film.

[0022] The Pt / FTO transparent conductive film grating structure is to scan the Pt / FTO transparent conductive film with a nanosecond laser with a pulse width of 1~2ns, a wavelength of 532nm, and a repetition rate of 1KHz. The method is as follows: adjust the position of the sample stage so that the surface of the Pt / FTO transparent conductive film is located 2.5mm behind the laser focus; control the laser energy density to 1.0J / cm...

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Abstract

The invention discloses a method for preparing a transparent conductive film with a grating structure. A pulsed laser with a pulse width of less than 20 ns and a wavelength of 400 to 1000 nm is used, so that the focus of the laser beam emitted by the pulsed laser after being focused by a lens is located at the M / TCO / glass transparent conductive film. At 0~2.5mm above the M layer of the film, the laser energy is controlled at 0.70~1.30J / cm2, the scanning speed is 5~20mm / s, the laser beam is scanned line by line in one direction, and the scanning line overlap rate is controlled at 50~70% , the surface of the M / TCO film is irradiated with laser, and the crystals on the surface of the transparent conductive film are recrystallized, and the surface is induced to form a regular grating structure; the process is simple to operate, the preparation time is short, and the controllability is good, without the need to introduce special For harsh environmental conditions such as gas or liquid media, the light transmittance of the film has been improved.

Description

technical field [0001] The invention relates to the field of laser micro-nano processing technology and semiconductor materials, in particular to a method for preparing a micro-nano grating structure on the surface of a transparent conductive film (M / TCO film). Background technique [0002] Transparent conductive oxide (TCO) film is a film with high conductivity, high light transmittance in the visible light range and high reflectivity in the infrared light range. The most widely used films include ZnO, In 2 o 3 , SnO 2 Films prepared from film materials of its doping system (such as AZO, ITO, FTO). With the development of the field of solar cells, the photoelectric properties of these traditional transparent conductive film materials are far from meeting the needs. At present, there are new material films or the preparation of multilayer composite transparent conductive films, or the preparation of micro-nano films on the surface of the film. Structure and other technolo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35H01B5/14
Inventor 任乃飞黄立静李保家周明
Owner JIANGSU UNIV
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