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Multi-quantum well solar cell and method of manufacturing multi-quantum well solar cell

A technology of solar cells and multiple quantum wells, applied in the field of solar cells, can solve problems such as inability to solve light conversion efficiency, and achieve the effects of high photoelectric conversion efficiency and low cost

Inactive Publication Date: 2014-08-20
JAPAN SCI & TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0020] However, even if the above-mentioned oxynitride semiconductor is applied to a multi-quantum well solar cell, most of the carriers generated by receiving sunlight will be recombined before detaching from the quantum wells, and the light cannot be resolved. The problem of conversion efficiency

Method used

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Embodiment 1

[0095]

[0096] On a sapphire substrate 1 having a thickness of 450 μm, a ZnO buffer film was formed by a nitrogen addition crystallization method. The sputtering method was used for film formation, and the gas flow rate was adjusted so that the pressure might become 0.3 Pa in a sputtering apparatus, and argon gas and nitrogen gas were introduced. The flow rate of argon and nitrogen is set to [N 2 ] = 2 sccm, [Ar] = 20 sccm. By introducing nitrogen into the sputtering device, nitrogen molecules dissociate in the device to generate nitrogen atoms, thereby forming a ZnO film on the substrate. The substrate temperature was set to 700°C.

[0097] Next, GaN having a lattice constant of 0.319 nm was stacked by MOCVD to form p-type semiconductor layer 2 . Magnesium is used in the p-type dopant. Set the substrate temperature to 1150°C, pour trimethylgallium as the Ga raw material, pour ammonia water as the N raw material, and pour magnesiumocene (Cp 2 Mg) was used as a magnesiu...

Embodiment 2

[0113]

[0114] A substrate on which a ZnON film was formed was formed in the same procedure as in Example 1. Next, ZnO having a lattice constant of 0.325 nm was laminated by a sputtering method to form the p-type semiconductor layer 2 . The substrate temperature during film formation was set to 700°C. The ZnO film is formed in an argon-nitrogen-oxygen mixed gas atmosphere of 0.3Pa, and the flow rates of argon, nitrogen, and oxygen are set to [Ar]=45sccm, [N 2 ]=7 sccm, [O 2 ] = 2 sccm. Doping was performed by using nitrogen as a p-type dopant and radicalizing nitrogen gas.

[0115] Next, ZnO having a lattice constant of 0.325 nm was laminated by a sputtering method to form barrier layer 5 . The film thickness of the barrier layer 5 was set to 30 nm. Next, on the barrier layer 5, ZnInON (composition ratio (element ratio) Zn:In=O:N=85:15, Zn+In:O+N=1:1) with a lattice constant of 0.329nm was combined The well layer 6 is grown to a film thickness of 30 nm. It is conside...

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Abstract

Provided at low cost is a multi-quantum well solar cell such that recombination of carriers generated by light absorption is inhibited and high photoelectric conversion efficiency is achieved. This multi-quantum well solar cell comprises a substrate, a p-type semiconductor layer, a barrier layer, a well layer, an n-type semiconductor layer, and electrodes and is characterized in that the barrier layer and the well layer comprise crystals having a wurtzite crystal structure, the well layer is composed of a metal-oxynitride that comprises Zn and at least one element selected from a group consisting of In, Ga, and Al, and a piezoelectric electric field is generated in the well layer. This allows for the provision of a multi-quantum well solar cell such that recombination of carriers generated by light absorption is inhibited and high photoelectric conversion efficiency is achieved.

Description

technical field [0001] The invention relates to a solar cell, in particular to a multi-quantum well solar cell and a method for manufacturing the multi-quantum well solar cell. Background technique [0002] Currently, most solar cells use Si as a material, but since only light in a wavelength range corresponding to the forbidden band width of the material can be used, the conversion efficiency of a solar cell formed of a single material is limited. Therefore, as an attempt to improve photoelectric conversion efficiency, a structure of a tandem solar cell using a plurality of materials with different bandgap widths has been devised. The structure of this tandem solar cell is that solar cells of a material having a wide bandgap are stacked sequentially from the light-receiving surface side, so that it is possible to utilize light in a wide range of wavelengths corresponding to the bandgap of each solar cell. Light. [0003] As another technology utilizing light of a wide ran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/18
CPCH01L31/075H01L31/035236H01L31/04Y02E10/50Y02E10/543Y02E10/548Y02P70/50H01L31/036H01L31/073H01L31/1828
Inventor 板垣奈穗白谷正治内田仪一郎
Owner JAPAN SCI & TECH CORP
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