Cathode preparation process for reducing niobium oxide capacitor equivalent series resistance

A technology of equivalent series resistance and preparation process, applied in capacitors, electrolytic capacitors, circuits, etc., can solve the problems of unfavorable mass production of niobium oxide capacitors, low filling rate of anode pellets, and low production efficiency, and achieve equivalent series resistance. The effect of resistance reduction, elimination of interlayer contact resistance, and improvement of filling rate

Active Publication Date: 2014-09-03
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the cumbersome process, the production efficiency is low, which is not conducive to the industrialized mass production of niobium oxide capacitors. At the same time, it is easy to cause manganese nitrate splashing during the thermal decomposition process, and the filling rate of manganese dioxide to the inside of the anode pellet is low.

Method used

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  • Cathode preparation process for reducing niobium oxide capacitor equivalent series resistance

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Select niobium monoxide powder with a CV value of 80000μF·V / g, use tantalum wire with a diameter of Ф0.29 as the anode lead wire, press a niobium oxide capacitor anode pellet with a specification of 10V220μF, and heat it under high temperature at 1500℃ / 20min The porous anode body is sintered in vacuum, and the sintered anode body is anodically formed in a phosphoric acid aqueous solution at 40V to manufacture a dielectric layer, and then a cathode layer is prepared on the surface of the anode body according to the following process.

[0043] (1) Processing of cathode semiconductor:

[0044] a. Immerse the anode pellets in a low-concentration manganese nitrate solution: the specific gravity is 1.05g / cm3; the immersion temperature is 50°C, and the immersion time is 7min; the thermal decomposition temperature is 250°C, and the decomposition time is 5min; the dehydration temperature is 85°C, and the dehydration time 20min; thermally decompose in saturated water vapor; repea...

Embodiment 2

[0062] Select niobium monoxide powder with a CV value of 80000μF·V / g, use tantalum wire with a diameter of Ф0.29 as the anode lead wire, press a niobium oxide capacitor anode pellet with a specification of 4V330μF, and heat it at 1500°C / 20min The porous anode body is sintered in vacuum, and the sintered anode body is anodically formed in a phosphoric acid aqueous solution at 16V to manufacture a dielectric layer, and then a cathode layer is prepared on the surface of the anode body according to the following process.

[0063] (1) Processing of cathode semiconductor:

[0064] a. Immerse the anode pellets in a low-concentration manganese nitrate solution: the specific gravity is 1.10g / cm3; the immersion temperature is 45°C, and the immersion time is 7 minutes; the thermal decomposition temperature is 230°C, and the decomposition time is 10 minutes; the dehydration temperature is 120°C, and the dehydration time is 10 minutes. 10min; thermally decompose in saturated water vapor; r...

Embodiment 3

[0081] Select niobium monoxide powder with a CV value of 80000μF·V / g, use tantalum wire with a diameter of Ф0.29 as the anode lead wire, press a niobium oxide capacitor anode pellet with a specification of 4V470μF, and heat it under high temperature at 1500℃ / 20min The porous anode body is sintered in vacuum, and the sintered anode body is anodically formed in a phosphoric acid aqueous solution at 16V to manufacture a dielectric layer, and then a cathode layer is prepared on the surface of the anode body according to the following process.

[0082] (1) Processing of cathode semiconductor:

[0083] a. Immerse the anode pellets in low-concentration manganese nitrate solution: the specific gravity is 1.05g / cm3; the immersion temperature is 48°C, and the immersion time is 6min; the thermal decomposition temperature is 280°C, and the decomposition time is 5min; the dehydration temperature is 150°C, and the dehydration time 5min; thermally decompose in saturated water vapor; repeat 2...

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Abstract

The invention discloses a cathode preparation process for reducing niobium oxide capacitor equivalent series resistance. The process mainly comprises steps of anode core block and dielectric film processing, cathode semiconductor processing, cathode transition layer processing and cathode leading-out layer processing. Impregnation of the anode core block forming the dielectric layer, dehydration and thermal decomposition of a low-concentration and high-concentration manganese nitrate solutions are carried out, a transition layer is added between the cathode semiconductor and the cathode leading-out layer, interlayer contact resistance is eliminated, and thus equivalent series resistance of the capacitor is reduced by more than 20%. As the dehydration step is adopted before the thermal decomposition step in the manganese nitrate solution, the filling rate of manganese dioxide inside the anode core block is improved, alternative impregnation and thermal decomposition in the low-concentration and high-concentration manganese nitrate solutions can be cancelled, the operation is simpler, the efficiency is higher, and the process is suitable for industrialized mass production.

Description

technical field [0001] The invention belongs to the technical field of capacitor preparation, and relates to a cathode preparation process of an electrolytic capacitor, in particular to a cathode preparation process for reducing the equivalent series resistance of a niobium oxide capacitor Background technique [0002] Tantalum capacitors are widely used in national defense and other military industrial fields and civilian electronics fields because of their excellent properties such as small size, large capacitance, small leakage current, long life, and good storage stability. With the wide application of tantalum capacitors, its scarce tantalum resources are gradually facing crisis. On the contrary, the ore reserves of niobium, the congener metal of tantalum, are far more abundant than those of tantalum, and the current market price of niobium ore is only about one-sixth of that of tantalum ore; and the resistance of niobium monoxide is 2-4 times higher than that of pure m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/052
Inventor 赵泽英杨立明王安玖
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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