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Method for modifying copper zinc tin selenium absorption layer of thin-film solar cell

A copper-zinc-tin-selenium thin film and solar cell technology, which is applied in circuits, electrical components, climate sustainability, etc., can solve the problems of long time and high equipment requirements, and achieve a simple modification process, environmental friendliness, and short time. Effect

Inactive Publication Date: 2014-09-10
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the method of vulcanization modification of CZTSe absorbing layer is mainly annealing (Bag S, Gunawan O, Gokmen T, et al.Low band gap liquid-processed CZTSe solar cell with10.1%efficiency[J].Energy&Environmental Science,2012, 5 (5): 7060-7065), this method needs the preparation conditions such as vacuum, high temperature, high to equipment requirement, takes a long time and can use H in the preparation process 2 S toxic gases, which limit the wide application of this method

Method used

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  • Method for modifying copper zinc tin selenium absorption layer of thin-film solar cell
  • Method for modifying copper zinc tin selenium absorption layer of thin-film solar cell

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Embodiment 1

[0021] A method for modifying the absorption layer of a copper-zinc-tin-selenium thin-film solar cell, comprising the following steps:

[0022] Step 1: Prepare a copper-zinc-tin-selenium absorbing layer on the molybdenum-coated soda-lime glass: first, place the molybdenum-coated soda-lime glass in a vacuum of 10 -5 In a vacuum environment of Pa, copper, zinc and tin with a purity of 99.999wt% are used as target materials, and argon gas with a purity of 99.999% (volume percentage) is input as a sputtering medium, at room temperature, power 50W, sputtering pressure (working Under the condition of 0.8Pa, direct current sputtering method was used to sputter copper for 30min, zinc for 17min, and tin for 15min respectively; Under pre-annealing for 4 hours; finally add 6mg of selenium powder, selenium annealing at 560°C for 2 hours, take out after annealing and rapidly cool down.

[0023] Step 2: Preparing the precursor solution: Add 0.005mol zinc chloride and 0.1mol thioacetamide t...

Embodiment 2

[0028] A method for modifying the absorption layer of a copper-zinc-tin-selenium thin-film solar cell, comprising the following steps:

[0029] Step 1: Prepare copper-zinc-tin-selenium absorption layer on molybdenum-plated soda-lime glass: first, add 0.0025mol copper chloride, 0.00125mol zinc sulfate, and 0.00125mmol stannous sulfate to 0.05L deionized water, stir to make it fully Dissolve to obtain mixed solution A, add 0.005mol selenium powder to 0.03L ethylenediamine, stir evenly to obtain mixed solution B, then mix mixed solution A and mixed solution B, stir evenly, and react at 200°C for 24h ; The solution after the reaction was centrifuged for 5min, poured out the supernatant, added 0.01L deionized water for ultrasonication, repeated the above steps for 6 times, and the rotating speed of each centrifugal was 6000 rpm to obtain the copper-zinc-tin dispersed in deionized water Selenium ink; Finally, spin-coat the above-mentioned copper-zinc-tin-selenium ink on molybdenum-p...

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Abstract

The invention provides a method for modifying a copper zinc tin selenium absorption layer of a thin-film solar cell, and belongs to the field of new energy. The method specifically comprises the steps that (a) the copper zinc tin selenium absorption layer is manufactured on soda-lime glass plated with molybdenum; (b) any one of soluble copper salt, soluble zinc salt and soluble tin salt and thioacid amide compounds are added to water, the concentration of the soluble copper salt or the soluble zinc salt or the soluble tin salt is 0.001 mol / L to 0.01 mol / L, and the mass ratio of the thioacid amide compounds to the soluble copper salt or the soluble zinc salt or the soluble tin salt is 20:1; (c) the soda-lime glass plated with the molybdenum with the absorption layer obtained in the step a is soaked in the solution, and is processed in water bath of 70 DEG C to 90 DEG C for 15 s to 1 min; (d) the soda-lime glass plated with the molybdenum with the absorption layer obtained after being processed in the step c is washed by deionized water, and is dried in a vacuum drying box at 40 DEG C to 70 DEG C for 2 h to 5 h. The modification method is easy and convenient to operate and safe, saves time and is low in cost.

Description

technical field [0001] The invention belongs to a preparation method of a thin-film solar cell in the field of new energy, and in particular relates to a method for modifying an absorbing layer of a copper-zinc-tin-selenium thin-film solar cell. Background technique [0002] With the gradual depletion of petrochemical energy sources, seeking stable and reliable alternative energy sources has become a major survival issue for all human beings in this century. Among many new energy sources, solar energy has become an Ideal future energy source. A solar cell is a device that converts the light energy of sunlight into electrical energy. In a new generation of thin-film solar cells, copper zinc tin selenium (Cu 2 ZnSnSe 4 , abbreviated as CZTSe) thin-film solar cells have the following advantages: First, the light absorption coefficient is as high as 10 4 cm -1 ; Second, the band gap width matches well with the solar spectrum; Third, the photoelectric conversion efficiency is...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 张庶白玉玲向勇
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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