Water chestnut type high-magnesium-content Zn<1-x>Mg<x>O nanometer structure and preparation method thereof

A technology of zn1-xmgxo and nanostructures, which is applied in the field of nano-functional material preparation, can solve the problems of undisclosed ZnMgO alloy nanowire nanostructure content, etc., and achieve the effect of simple equipment control, convenient operation, and high degree of freedom in growth parameters

Inactive Publication Date: 2014-10-08
ZHEJIANG UNIV
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  • Application Information

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Problems solved by technology

[0006] The patent with the publication number CN 103227230A discloses a ZnMgO nanowire solar-blind zone ultraviolet detector and its preparation method, and provides a ZnMgO nanowire lateral growth method, but the patent does not disclose the specific nanometer size of the prepared ZnMgO alloy nanowire. Structure and Mg content in ZnMgO ternary alloys

Method used

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  • Water chestnut type high-magnesium-content Zn&lt;1-x&gt;Mg&lt;x&gt;O nanometer structure and preparation method thereof
  • Water chestnut type high-magnesium-content Zn&lt;1-x&gt;Mg&lt;x&gt;O nanometer structure and preparation method thereof
  • Water chestnut type high-magnesium-content Zn&lt;1-x&gt;Mg&lt;x&gt;O nanometer structure and preparation method thereof

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Embodiment 1

[0029] Growing equipment such as figure 1 In the shown dual temperature zone tube furnace, the purity of pure zinc powder and pure magnesium powder are 99.999% and 99% respectively, and the substrate is Si(100) sheet. Concrete preparation steps are as follows:

[0030] (1) Mix and grind pure zinc powder and pure magnesium powder in a mass ratio of 5:1. After mixing fully, take 1g of the mixture and pour it into the quartz tube 2 as the source material 3 of the reaction, and then put the quartz tube containing the mixture The tube 2 is put into the bottom of a tubular reaction chamber 1 with a diameter of 2 cm, a length of 25 cm, and an opening at one end, and then the cleaned substrate 4 is placed in the quartz tube 2 near the opening 9 of the quartz tube;

[0031] (2) Place the tubular reaction chamber 1 carrying the quartz tube 2 in the tube furnace 8, adjust the position so that the source material 3 and the substrate 4 are respectively located at the center of the respect...

Embodiment 2

[0037] Growing equipment such as figure 1 In the shown dual temperature zone tube furnace, the purity of pure zinc powder and pure magnesium powder are 99.999% and 99% respectively, and the substrate is Si(100) sheet. Concrete preparation steps are as follows:

[0038] (1) Mix and grind pure zinc powder and pure magnesium powder according to the mass ratio of 4:1. After mixing fully, take 1g of the mixture and pour it into the quartz tube 2 as the source material 3 of the reaction, and then put the quartz tube loaded with the mixture The tube 2 is put into the bottom of a tubular reaction chamber 1 with a diameter of 2 cm, a length of 25 cm, and an opening at one end, and then the cleaned substrate 4 is placed in the quartz tube 2 near the opening 9 of the quartz tube;

[0039] (2) Place the tubular reaction chamber 1 carrying the quartz tube 2 in the tube furnace 8, adjust the position so that the source material 3 and the substrate 4 are respectively located at the center o...

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Abstract

The invention discloses a water chestnut type high-magnesium-content Zn<1-x>Mg<x>O nanometer structure and a preparation method of the water chestnut type high-magnesium-content Zn<1-x>Mg<x>O nanometer structure. A thermal evaporation method is adopted for the preparation method. A two-temperature-zone tube furnace is adopted for the thermal evaporation method. According to the process, pure zinc powder and pure magnesium powder which have a certain stoichiometric ratio are ground and mixed to serve as source material, a certain amount of the mixture is poured into a quartz boat, the quartz boat is placed in the bottom of a quartz tube, a substrate is placed on the opening of the quartz tube, and finally the quartz tube is placed in the tube furnace to allow the mixture to be heated and react under high-purity oxygen and inert gas, so that the water chestnut type high-magnesium-content Zn<1-x>Mg<x>O nanometer structure is obtained. The operation process is simple, the temperature of the source material region and the temperature of the substrate region are independently controlled, process parameters can be flexibly controlled, and nanometer material in the new form can be easily formed. The water chestnut type high-magnesium-content Zn<1-x>Mg<x>O nanometer structure and the preparation method solve the technical problem that phase separation easily happens to Zn<1-x>Mg<x>O nanometer alloy when the content of Mg exceeds 33%, the content of Mg in the Zn<1-x>Mg<x>O three-element alloy obtained through synthesis ranges form 77% to 97%, the Zn<1-x>Mg<x>O three-element alloy is of a water chestnut type nanometer structure, and possibility is provided for ZnMgO-based solar-blind region ultraviolet detector development.

Description

technical field [0001] The invention belongs to the technical field of preparation of nano functional materials, in particular to Zn with high magnesium content 1-x Mg x O nanostructures and methods for their preparation. Background technique [0002] As a semiconductor material with direct band gap and wide band gap, ZnO has a band gap of 3.37eV at room temperature and has excellent photoelectric properties in the ultraviolet region. Strong membrane and good stability. After incorporation of the Mg component, the formation of Zn 1-x Mg x O ternary alloy semiconductor, theoretically, the bandgap width can be continuously adjusted between 3.3-7.8eV, and the wavelength range corresponding to the bandgap width change is 368-159nm, and its absorption edge in the ultraviolet region increases with the increase of Mg content. Blue shift to short wavelength direction, theoretically when Zn 1-x Mg x When the Mg content in the O ternary alloy exceeds 65%, the Zn 1-x Mg x The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296C23C14/08B82Y30/00B82Y40/00
CPCH01L31/02966B82Y30/00B82Y40/00C23C14/081C23C14/086H01L21/02554H01L21/02631H01L31/02963
Inventor 吕建国王峰袁禹亮江庆军叶志镇
Owner ZHEJIANG UNIV
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