Single-mode silica substrate hybrid laser light source output by silicon waveguide

A technology of laser light source and silicon waveguide, which is applied in the direction of semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve problems such as limiting the development of single-mode silicon-based hybrid semiconductor lasers, reducing laser mode gain, and increasing threshold current density. Facilitate large-scale production, achieve single longitudinal mode output, and reduce the effect of threshold current density

Active Publication Date: 2014-10-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the reduction of the confinement factor will reduce the modal gain of the laser, which will lead to an increase in the threshold current density; and if the silicon waveguide on SOI is too thick (higher than 400nm), it will cause the laser to output multiple tr

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  • Single-mode silica substrate hybrid laser light source output by silicon waveguide
  • Single-mode silica substrate hybrid laser light source output by silicon waveguide
  • Single-mode silica substrate hybrid laser light source output by silicon waveguide

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Embodiment

[0040] figure 1 (a) to figure 1 (c) is a schematic diagram of the evolution of the three-dimensional structure of a single-mode silicon-based hybrid laser light source output by a silicon waveguide according to an embodiment of the present invention. figure 1 (a) is a III-V taper gain structure, where the length of the taper is 500 μm and the width of the top is 0.4 μm; figure 1 (b) is an SOI ridge waveguide structure, in which the height of the silicon on the top layer of SOI is 0.34 μm, and the etching depth of the silicon waveguide and the periodic microgrooves are both 0.2 μm; figure 1 (c) is a single-mode silicon-based hybrid laser light source obtained after reflow soldering. The reflow soldering metal is an AuSn alloy, which forms an ohmic contact after annealing and is used as the negative electrode of the device; the lasing wavelength of the single-mode silicon-based hybrid laser source is 1490nm. The total device length is 1000 μm.

[0041] figure 2 (a) is a sch...

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Abstract

The invention discloses a single-mode substrate hybrid laser light source output by a silicon waveguide. The laser light source comprises a Tapper gain structure and an SOI ridge type waveguide structure which are arranged in a stacked mode. The Taper gain structure is attached to the SOI ridge type waveguide structure in an inverted mode through a reflow soldering technology. According to the single-mode silica substrate hybrid laser light source output by the silicon waveguide, an III-V group Taper structure is introduced into a periodicity microgroove hybrid laser, and an optical lower limiting layer is grown on the hybrid laser, so that active area limiting factors are improved, and the mode gains in the III-V group are increased. Meanwhile, the introducing of the Taper structure guarantees high-efficiency coupling of the III-V group structure and the silicon waveguide, and outputting of single longitudinal laser from the silicon waveguide is achieved. The single-mode substrate hybrid laser light source output by the silicon waveguide is low in manufacturing cost, can be used for silicon laser interconnection, the laser light source in optical communication improves the coupling efficiency of an III-V group light source and the silicon waveguide, and a high-efficiency coupling single-mode hybrid silicon semiconductor laser light source is achieved.

Description

technical field [0001] The invention relates to a laser light source in the field of silicon-based platform optoelectronic integration, in particular to a single-mode silicon-based hybrid laser light source output by a silicon waveguide in silicon-based hybrid integration. Background technique [0002] With the development of optical communication technology and microelectronics technology, people require faster and faster computing speed of computers and smaller and smaller device sizes. However, the interconnection delay effect and energy consumption of integrated circuits based on electrical interconnection limit the further development of microelectronics technology. Compared with traditional electrical interconnection technology, optical interconnection technology using optical waves as information carriers , has the advantages of no signal interference, fast response, low power consumption, and large bandwidth. Therefore, one of the current research hotspots is to rea...

Claims

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Application Information

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IPC IPC(8): H01S5/22H01S5/343
Inventor 郑婉华冯朋张冶金彭红玲张斯日古楞王宇飞刘磊
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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