Nano-structure array materials and preparation method thereof

Abstract

The invention provides nano-structure array materials and a preparation method thereof, particularly provides a wide bandgap semiconductor 4H crystal-form silicon carbide material which is resistant to high temperature and abrasion and is provided with a nanowire array and a preparation method of the wide bandgap semiconductor 4H crystal-form silicon carbide material, and relates to the technical field of the nano-structure array materials. The nano-structure array materials comprise SiC nanowires in different crystal forms such as the 3C crystal form, the 4H crystal form and 6H crystal form. For example, on the basis of an n-type heavily-doped 4H-SiC substrate, a constant pulse current is applied to two poles by selecting appropriate pulse frequency and retention time so as to obtain a uniform mesoporous array, the current forward duty cycle and the current density are increased appropriately so that bottom pores can be separated from the substrate, and the nanowire array is obtained by means of a stripping means. The nano-structure array materials and the preparation method thereof have the advantages that the nano-structure array materials and the preparation method thereof are simple and reliable, the repetition rate is high, the density of the nanowire array is high, and preparation cost is saved. A solid technical material foundation is provided for application of silicon carbide products having the advantages of being high in carrier mobility and heat conductivity, resistant to abrasion and high voltage and the like in the fields of power electronics and aerospace.

Description

technical field [0001] The invention relates to the technical field of nanostructure array materials, in particular to a high-temperature-resistant, corrosion-resistant, wide-bandgap semiconductor 4H crystal silicon carbide material with nanowire arrays and a preparation method thereof. Background technique [0002] As the third-generation semiconductor silicon carbide material, it has many advantages over the first-generation semiconductor, such as high carrier mobility, thermal conductivity, corrosion resistance, and high-voltage resistance. The same nanostructured silicon carbide also has the above advantages. It is expected to challenge the position of the first generation of nanostructured silicon materials in sensors, field emission devices and energy storage devices. At present, nanowires of 3C-SiC and 6H-SiC can be prepared by gas-phase, liquid-phase, and solid-phase methods, but silicon carbide of this type is inferior to 4H-SiC in most properties, and it is difficu...

AI Technical Summary

Problems solved by technology

At present, nanowires of 3C-SiC and 6H-SiC can be prepared by gas-phase, liquid-phase, and solid-phase methods, but silicon carbide of this type is inferior to 4H-SiC in most properties, and it is difficult to Preparation of 4H crystal form, high quality, silicon carbide nanowires