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Solar photoelectric conversion coating for building and fabrication method for solar photoelectric conversion coating

A photoelectric conversion, solar energy technology, applied in conductive coatings, photovoltaic power generation, radiation-absorbing coatings, etc., can solve the problems of poor anti-fouling, poor conductivity, low efficiency, etc., achieve fast curing speed, maintain light transmittance and The effect of promotion

Active Publication Date: 2014-11-05
台州科金中高技术转移有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the shortcomings of current solar photovoltaic conversion coatings, such as poor electrical conductivity, poor antifouling performance and low efficiency, the invention provides a building solar photovoltaic conversion coating and a preparation method thereof

Method used

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  • Solar photoelectric conversion coating for building and fabrication method for solar photoelectric conversion coating

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Embodiment 1

[0036] 1) Take 30 parts by weight of phosphorus-doped silicon crystal, 25 parts by weight of epoxy acrylate resin, 4 parts by weight of conductive mica powder, 1 part by weight of 1-chloro-4-hydroxythioxanthone, and 0.2 parts by weight of hydroquinone , 0.2 parts by weight of polyacrylate, 0.2 parts by weight of n-butanol, 0.35 parts by weight of polyoxyethylene alkylphenyl ether, add 25 parts by weight of water, and press the preparation method step a to prepare II:N type semiconductor coatings.

[0037] 2) Get 30 parts by weight of boron-doped silicon crystals, 25 parts by weight of epoxy acrylate resin, 4 parts by weight of conductive mica powder, 1 part by weight of 1-chloro-4-hydroxythioxanthone, 0.2 parts by weight of hydroquinone , 0.2 parts by weight of polyacrylate, 0.2 parts by weight of n-butanol, 0.35 parts by weight of polyoxyethylene alkylphenyl ether, add 25 parts by weight of water, according to the preparation method step b, to obtain III: P type semiconducto...

Embodiment 2

[0043] 1) Take 35 parts by weight of gallium arsenide doped with selenium, 30 parts by weight of polyurethane acrylate resin, 5 parts by weight of conductive titanium dioxide, 1.5 parts by weight of 2-hydroxythioxanthone, 0.2 parts by weight of p-benzophenone, and 0.2 parts by weight of organic Silicone resin, 0.2 parts by weight of n-butanol, 0.4 parts by weight of sodium polymethacrylate, and 20 parts by weight of water are added, and according to step a of the preparation method, a II:N type semiconductor coating with uniformly dispersed components is prepared.

[0044] 2) Take 35 parts by weight of zinc-doped gallium arsenide, 30 parts by weight of polyurethane acrylate resin, 5 parts by weight of conductive titanium dioxide, 1.5 parts by weight of 2-hydroxythioxanthone, 0.2 parts by weight of p-benzophenone, and 0.2 parts by weight of organic Silicone resin, 0.2 parts by weight of n-butanol, 0.4 parts by weight of sodium polymethacrylate, and 30 parts by weight of water ar...

Embodiment 3

[0050] 1) Take 40 parts by weight of gallium arsenide doped with selenium, 35 parts by weight of polyurethane acrylate resin, 6 parts by weight of conductive titanium dioxide, 1.5 parts by weight of 1-chloro-4-hydroxythioxanthone, 0.2 parts by weight of p-benzophenone, 0.2 parts by weight of silicone resin, 0.2 parts by weight of tributyl phosphate, 0.5 parts by weight of sodium polymethacrylate, adding 30 parts by weight of water, according to step a of the preparation method, to prepare a II: N-type semiconductor coating with uniform dispersion of components .

[0051] 2) Take 40 parts by weight of zinc-doped gallium arsenide, 35 parts by weight of polyurethane acrylate resin, 6 parts by weight of conductive titanium dioxide, 1.5 parts by weight of 1-chloro-4-hydroxythioxanthone, 0.2 parts by weight of p-benzophenone, 0.2 parts by weight of silicone resin, 0.2 parts by weight of tributyl phosphate, 0.5 parts by weight of sodium polymethacrylate, and 30 parts by weight of wat...

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Abstract

The invention relates to a solar photoelectric conversion coating for a building and a fabrication for the solar photoelectric conversion coating. The photoelectric conversion coating is provided with four layers and two extraction electrodes, wherein four layers comprises: I, a reflection (or diffuse-reflection) insulation coating based on an outer wall of the building; II, a coating layer containing an N-type semiconductor on the I; III, a coating layer containing a P-type semiconductor on the II; and IV, a self-cleaning coating layer on the III. The two extraction electrodes are respectively arranged between the I and the II and between the III and the IV, the N-type semiconductor and the P-type semiconductor are grinded and prepared into the II (an N-type coating) and the III (a P-type coating) with a synthetic resin and an additive, all coatings are sequentially coated with an object substrate, a p-n junction is formed on the interfaces of the coating II and the coating III, under the irradiation of sun light, the p-n junction can generate a photoproduction electromotive force, and with the adoption of the extraction electrodes, electric energy can be provided to a load when an external circuit is energized.

Description

technical field [0001] The invention relates to a coating, more specifically, the invention relates to a building solar photovoltaic conversion coating, which belongs to the field of energy-saving building coatings. Background technique [0002] Solar energy is an inexhaustible and clean energy without pollution. With the increasingly prominent potential crisis of global conventional energy and the continuous deterioration of the ecological environment, countries around the world are forced to actively develop new energy sources such as solar energy. In recent years, my country's solar photovoltaic technology has made great progress, and the requirements for building energy conservation have gradually increased. Building Integrated Photovoltaics (BIPV) is the perfect combination of solar photovoltaics and buildings, bringing a new direction to the development of new energy. [0003] The advantages of combining photovoltaic power generation with buildings are obvious. One i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0445H01L31/056H01L31/0216H01L31/18C09D5/24C09D5/32C09D5/25
CPCY02E10/52H01L31/02168C09D5/00C09D5/24C09D5/32
Inventor 陈庆廖宾
Owner 台州科金中高技术转移有限公司
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