A ternary system relaxor ferrovoltage transistor and its multi-temperature region growth method

A growth method, voltage and electricity technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of crystal quality and performance, and achieve the goals of saving growth time, improving crystal quality, and increasing single crystal rate Effect

Active Publication Date: 2017-04-26
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a ternary system relaxor ferroelectric transistor and its multi-temperature zone growth method, which can effectively solve the problems of crystal quality and performance in the growth of relaxor ferroelectric transistor Ferroelectric crystal materials lay a solid foundation

Method used

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  • A ternary system relaxor ferrovoltage transistor and its multi-temperature region growth method
  • A ternary system relaxor ferrovoltage transistor and its multi-temperature region growth method
  • A ternary system relaxor ferrovoltage transistor and its multi-temperature region growth method

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Embodiment 1

[0040] The multi-temperature region growth technology of the relaxation ferroelectric voltage transistor of the present invention comprises the following steps:

[0041] 1) In order to improve crystal growth efficiency, crucible utilization and reduce costs, refer to the method described in the invention patent with the patent number 201410076798.8 and the publication number CN103866386A, according to the stoichiometric ratio of 0.25PIN-0.42PMN-0.33PT (wherein P refers to Pb , IN is IN powder, MN is MN powder, T is Ti) for batching, and sintering into ceramic raw materials for crystal growth.

[0042] 2) Select the PIMNT single crystal with crystal orientation, make the seed crystal after directional cutting and mechanical polishing, etch the seed crystal with a solution prepared with a volume ratio of HCl:HF=4:1~3:1 for 3~4min, and the etching is completed Then use absolute ethanol to ultrasonically clean for 5 to 10 minutes, then take it out and use N 2 air dry;

[0043] ...

Embodiment 2

[0054] The difference between this embodiment and Example 1 is: according to the stoichiometric ratio of 0.05PIN-0.58PMN-0.37PT (wherein P refers to Pb, IN is IN powder, MN is MN powder, T is Ti) , and sintering synthetic crystal growth ceramic raw materials; the rest of the content is exactly the same as described in Example 1.

[0055] 1) In order to improve crystal growth efficiency, crucible utilization and reduce costs, refer to the method described in the invention patent with the patent number 201410076798.8 and the publication number CN103866386A, according to the stoichiometric ratio of 0.05PIN-0.58PMN-0.37PT (wherein P refers to Pb , IN is IN powder, MN is MN powder, T is Ti) for batching, and sintering into ceramic raw materials for crystal growth.

[0056] 2) Select the PIMNT single crystal with crystal orientation, make the seed crystal after directional cutting and mechanical polishing, etch the seed crystal with a solution prepared with a volume ratio of HCl:HF...

Embodiment 3

[0065] The difference between this embodiment and Example 1 is: according to the stoichiometric ratio of 0.25PIN-0.42PMN-0.33PT (wherein P refers to Pb, IN is IN powder, MN is MN powder, T is Ti) , and sintering synthetic crystal growth ceramic raw materials; the rest of the content is exactly the same as described in Example 1.

[0066] 1) In order to improve crystal growth efficiency, crucible utilization and reduce costs, refer to the method described in the invention patent with the patent number 201410076798.8 and the publication number CN103866386A, according to the stoichiometric ratio of 0.25PIN-0.42PMN-0.33PT (wherein P refers to Pb , IN is IN powder, MN is MN powder, T is Ti) for batching, and sintering into ceramic raw materials for crystal growth.

[0067] 2) Select a PIMNT single crystal with a high melting point crystal orientation, make a seed crystal after directional cutting and mechanical polishing, and corrode the seed crystal with a solution prepared with ...

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Abstract

The invention discloses a ternary relaxation ferroelectric piezoelectric crystal and a multi-temperature-zone growth method thereof, belonging to the technical field of crystal growth. The chemical constitution of a ternary relaxation ferroelectric crystal material is xPb(In(1 / 2)Nb(1 / 2))O3-yPb(Mg(1 / 3)Nb(2 / 3))O3-zPbTiO3(PIMNT), wherein x is more than 0 and less than or equal to 7; y is more than 0 and less than or equal to 0.7, and z is equal to 1-x-y. The ternary relaxation ferroelectric crystal material is prepared by using a melt method, the crystal growth is carried out by improving a Bridgman method (VB) through multiple temperature zones, and the growth method mainly concretely comprises the following steps: raw material synthesis, temperature zone regulation, temperature rise and melting, descending and growth, thermal treatment and the like. The PIMNT crystal grown by adopting the multi-temperature-zone growth technology of the relaxation ferroelectric piezoelectric crystal not only has the characteristics of being high in phase change temperature and voltage resistance, large in stress capacity and the like, but also has the advantages of being good in completeness, non-cracking, high in mechanical strength, low in defect density, and the like, the ternary relaxation ferroelectric crystal has very wide prospects on the aspects of improving the performances of the PIMNT crystal and applying on related devices, especially large-power devices.

Description

technical field [0001] The invention relates to the technical field of crystal growth, and relates to a multi-temperature zone growth method of a relaxor ferroelectric voltage transistor, in particular to a ternary system relaxor ferrovoltage transistor and a multi-temperature zone growth method thereof. Background technique [0002] As we all know, piezoelectric materials have been widely used in the fields of electroacoustics, underwater acoustics, and ultrasound due to their excellent piezoelectric properties. In recent years, relaxor ferroelectric piezoelectric crystal materials have been highly concerned because of their piezoelectric performance, which is tens or even hundreds of times higher than that of piezoelectric ceramics. The piezoelectric constant of relaxor ferrovoltage transistor material can reach 2000-3000pC / N, the dielectric constant at room temperature can reach as high as 4000-6000, the electromechanical coupling coefficient can reach more than 90%, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B11/14C30B29/22
Inventor 王领航
Owner XI AN JIAOTONG UNIV
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