Organic light emitting device and manufacturing method thereof
An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as low luminous efficiency, and achieve the effects of improving luminous efficiency, speed and matching.
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[0033] Such as figure 2 Shown, the preparation method of the organic electroluminescent device of one embodiment, comprises the following steps:
[0034] Step S110 , preparing an anode 20 on the surface of the substrate 10 .
[0035] The substrate 10 is glass. The thickness of the substrate 10 is 0.1 mm˜1 mm.
[0036] The substrate 10 is pre-treated before use, and the pre-treatment includes: placing the substrate in deionized water containing detergent for ultrasonic cleaning, after cleaning, it is treated with isopropanol and acetone in ultrasonic waves for 20 minutes, and then nitrogen gas is used to clean the substrate. blow dry.
[0037] The anode 20 is formed on the surface of the substrate 10 . The material of the anode 20 is indium tin oxide (ITO) or aluminum doped zinc oxide (AZO). The thickness of the anode 20 is 70nm-200nm.
[0038] In this embodiment, the anode 20 is prepared by vacuum sputtering. When sputtering, the background vacuum is 1×10 -5 Pa~1×10 ...
Embodiment 1
[0062] The structure of the organic electroluminescent device in this embodiment is: glass substrate / ITO (70nm) / F4-TCNQ: P3HT (50nm) / TPD (5nm) / Rubrene (10nm) / TPBi (20nm) / LiF (0.5nm) / Ag(200nm). Wherein, " / " indicates a stacked structure, and ":" indicates doping or mixing, and the following embodiments are the same.
[0063] The preparation of the organic electroluminescent device of this embodiment is as follows:
[0064]Step 1. Provide the substrate, put the glass in deionized water containing detergent for ultrasonic cleaning, after cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen;
[0065] Step 2. In a vacuum of 1×10 -5 In the vacuum coating system of Pa, the anode is prepared on the substrate by magnetron sputtering, the material is ITO, and the thickness is 70nm;
[0066] Step 3, using a spin-coating process to prepare a hole transport layer on the surface of the anode under a nitrogen atmosphere,
[0067] ...
Embodiment 2
[0076] The structure of the organic electroluminescent device in this embodiment is: glass substrate / AZO(200nm) / F6-TNAP:P3HT(1:10000) / TCTA(10nm) / Ir(piq) 3 :NPB(8%, 20nm) / Bphen(60nm) / NaF(2nm) / Al(70nm).
[0077] The preparation of the organic electroluminescent device of this embodiment is as follows:
[0078] Step 1, providing a base;
[0079] Step 2. In a vacuum of 1×10 -3 In the vacuum coating system of Pa, the method of magnetron sputtering is used to prepare an anode on the substrate, the material is AZO, and the thickness is 200nm;
[0080] Step 3, using a spin-coating process to prepare a hole transport layer on the surface of the anode under a nitrogen atmosphere,
[0081] The material of the hole transport layer is F6-TNAP doped P3HT, the molar ratio is 1:10000, and it is prepared according to the following method:
[0082] 1. Dissolve the dopant F6-TNAP and poly-3-hexylthiophene with the solvent dimethyl sulfoxide according to the metering ratio, and stir evenly, w...
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