A kind of in-situ doping method for preparing semiconductor single crystal material by pvt method

Abstract

The invention relates to an in-situ doping method for preparing a semiconductor monocrystal material by a physical vapor transport (PVT) method. The in-situ doping method includes the following steps that (1) a double-temperature-area PVT crystal growing furnace is used, raw materials and dopants are subjected to technical processing and mixed to be together put in a raw material area, and a substrate is put at a substrate position; (2) temperatures of a first temperature area and a second temperature area of the PVT crystal growing furnace are adjusted, and the temperature range of the double temperature areas is determined according to physical properties and features of the raw materials; (3) after a growing process is finished, a growing tube is taken out, and a monocrystal doped with elements can be obtained. The in-situ doping method for preparing the semiconductor monocrystal material by the PVT method has the advantages that uniform distribution of doped elements is facilitated, uniform electrical property of the monocrystal material can be achieved, loss of a crystal structure is reduced, thereby, crystal qualities can be effectively improved, the preparation process of the monocrystal material can be simplified, and large-scale production of the monocrystal material is facilitated.

Description

technical field [0001] The invention relates to a doping method for preparing a semiconductor single crystal material by a PVT method, in particular to an in-situ doping method for preparing a semiconductor single crystal material by a PVT method. Background technique [0002] The process of preparing semiconductor single crystal material by physical vapor transport method (PVT method) is a sublimation and desublimation process, and it is also a transport process of heat, mass and power. By adjusting the temperature field distribution of single crystal furnace, growth pressure, carrier gas flow rate, etc. parameters, reduce internal defects and impurity elements, and finally prepare high-quality semiconductor single crystal materials. [0003] Under normal circumstances, the electrical properties of intrinsic semiconductor materials cannot meet the requirements of device use. In order to adjust and control the electrical properties of semiconductors, after the PVT preparatio...

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Problems solved by technology

[0003] Under normal circumstances, the electrical properties of intrinsic semiconductor materials cannot meet the requirements of device use. In order to adjust and control the electrical properties of semiconductors, after the PVT preparation process of semiconductor single crystal materials is completed, specific elements are often diffused or ion implanted. Doped into the semiconductor material body to obtain the semiconductor single crystal material with the required electrical properties. Among them, the semiconductor material prepared by the diffusion process has obvious changes in the diffusion concentration with the depth, and its electrical uniformity is not good, and the control accuracy of the process is high. However, the ion implantation process equipment is expensive and complicated. During the implantation process, the collision of incident ions can easily cause damage to the crystal structure. Therefore, an annealing process must be added to repair the crystal structure.

[0004] In short, the traditional PVT method to prepare semiconductor single crystal materials independently realizes the growth process and doping process of semiconductor single crystal materials, which increases the complexity of the process. At the same time, the doping process has poor doping uniformity and easily causes damage to the crystal structure. And other issues

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