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A kind of forming method of graphene pattern

A graphene and graphene layer technology, applied in gaseous chemical plating, coatings, electrical components, etc., can solve problems such as high cost, complex template manufacturing process, and difficulty in achieving accurate positioning of graphene, reducing costs, Avoid quality defects and avoid the effect of repeated transfers

Active Publication Date: 2017-08-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method avoids the damage of graphene based on photolithography and other steps, but it is difficult to achieve accurate positioning of graphene in actual operation
[0007] (3) Graphene is imprinted on the substrate by template imprinting method, which can produce graphene with different graphics, but the manufacturing process of the template is complicated and the cost is too high

Method used

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  • A kind of forming method of graphene pattern
  • A kind of forming method of graphene pattern
  • A kind of forming method of graphene pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Figure 1~4 It is a schematic diagram of Embodiment 1 of the first method for forming a graphene pattern provided by the present invention.

[0050] refer to figure 1 , providing a substrate 100; on the substrate 100, a graphene growth layer 110 and a masking layer 120 are successively formed from bottom to top.

[0051] In this embodiment, the substrate 100 may be silicon, germanium, gallium arsenide or silicon germanium (SiGe) compound with single crystal, polycrystalline or amorphous structure, or a substrate made of silicon on insulator (SOI). All existing substrates can be used as the substrate of the present invention, and will not be listed here. In this embodiment, the substrate 100 may be a silicon substrate.

[0052] In this embodiment, the graphene growth layer 110 is preferably a silicon carbide layer. The method for forming the silicon carbide layer may be an epitaxial method, and the specific process includes: placing the substrate 100 in a CVD chamber...

Embodiment 2

[0065] In this embodiment, the graphene layer is also formed by the thermal decomposition method of silicon carbide. Compared with the technical solution in the above-mentioned embodiment 1, the only difference is that in this embodiment, the substrate is silicon carbide, and graphite is directly formed on the substrate. vinyl layer.

[0066] Figure 5-7 It is a schematic diagram of the forming method of the graphene pattern of the present embodiment, and its specific steps include:

[0067] refer to Figure 5 , providing a substrate 200 , and forming a masking pattern layer 123 on the substrate 200 .

[0068] In this embodiment, the substrate 200 is a silicon carbide substrate.

[0069] In this embodiment, the masking pattern layer 123 has an opening 142 , and the surface of the silicon carbide substrate 200 is exposed in the opening 142 . Wherein, the forming process of the masking pattern layer 123 is similar to the forming process of the masking pattern layer 121 in Em...

Embodiment 3

[0073] The present invention also provides another method for forming a graphene pattern, which differs from the technical scheme of the method for forming a graphene pattern listed in Examples 1 and 2 in that the method for forming a graphene pattern is formed on a substrate with After exposing the masking pattern layer of the opening of the substrate, a graphene growth layer is formed on the surface of the substrate in the opening, so that a graphene layer is formed on the surface of the graphene growth layer. The method for forming the graphene pattern provided in this embodiment also defines the subsequent graphene layer structure with the opening structure of the masking pattern layer, so as to avoid the graphene layer being damaged by etching in the further patterning process after the graphene layer is formed. are damaged, thereby ensuring the electrical properties of the formed graphene pattern. Moreover, after the graphene layer is formed, it is not necessary to remov...

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Abstract

The invention provides a method for forming graphene patterns. The method includes forming masking layers on substrates and forming openings in the masking layers; forming graphene layers on the surfaces of the substrates. The surfaces of the substrates are exposed via the openings. The graphene layers are positioned inside the opening. The method has the advantages that the graphene layers are directly formed on the surfaces of the substrates, so that the formed graphene patterns can be assuredly accurately positioned on the substrates; owing to the mode that the graphene layers are formed inside the openings of the masking layers, the structures of the graphene patterns which are formed on the exposed surfaces of the substrates in follow-up procedures can be constrained by patterns of the openings of the masking layers, the graphene layers can be prevented from being further etched, and quality defects of the formed graphene layers due to etching can be prevented; the accurate graphene patterns with high quality can be acquired by the aid of the method.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a method for forming a graphene pattern. Background technique [0002] Graphene is a new type of material with stable structure and excellent mechanical and electrical properties. Graphene is the thinnest and hardest nano-scale material found so far, with a thermal conductivity as high as 5300W / (m K); the carriers of graphene can be both electrons and holes, and the mobility exceeds 15000cm 2 / (V s), and the carrier mobility is almost independent of temperature. The thermal conductivity and carrier mobility of graphene are much higher than those of carbon nanotubes and silicon crystals. In addition, the resistivity of graphene is only about 10 -6 Ω cm, lower than copper or silver. [0003] Based on the above advantages, graphene has gradually become a new favorite material for the preparation of micro-nano devices such as molecular sensors, field-effect transistors, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205
CPCC23C16/042H01L21/2053
Inventor 卜伟海王文博
Owner SEMICON MFG INT (SHANGHAI) CORP
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