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Copper-interconnection diffusion barrier layer, semiconductor device and method for manufacturing copper-interconnection diffusion barrier layer

A manufacturing method and barrier layer technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems affecting product quality and life, improve product quality and life, and achieve high mechanical strength. , The effect of making up for the lack of mechanical strength

Active Publication Date: 2015-02-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, most of the currently used diffusion barriers are single-layer tantalum film materials or tantalum nitride-tantalum double-layer film materials, but in reliability testing, it is particularly easy to use such as figure 1 Problems occur at the interface between the middle diffusion barrier layer 103 and the lower layer copper wire 100, which seriously affects the quality and life of the product, especially the electromigration performance and stress migration performance

Method used

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  • Copper-interconnection diffusion barrier layer, semiconductor device and method for manufacturing copper-interconnection diffusion barrier layer
  • Copper-interconnection diffusion barrier layer, semiconductor device and method for manufacturing copper-interconnection diffusion barrier layer
  • Copper-interconnection diffusion barrier layer, semiconductor device and method for manufacturing copper-interconnection diffusion barrier layer

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no. 1 example

[0039] see figure 2 , the diffusion barrier layer of copper interconnection in the present embodiment is used in the copper integration application of contact hole, the semiconductor device of the diffusion barrier layer of the present embodiment comprises the lower layer copper wire layer 10, the low dielectric constant on the copper wire layer 10 The dielectric layer 11 and the contact hole 18 formed in the low dielectric constant dielectric layer 11, the diffusion barrier layer of this embodiment specifically includes the following structure:

[0040] The first tantalum layer 12 covers the bottom of the contact hole 18, that is, directly covers the surface of the exposed copper wire layer 10;

[0041] The tantalum nitride layer 13 covers the sidewall of the contact hole 18 and does not contact the underlying copper wire layer 10; and

[0042] The second tantalum layer 14 covers the first tantalum layer 12 and the tantalum nitride layer 13 and is used as a growth matrix la...

no. 2 example

[0052] see image 3 , the diffusion barrier layer of copper interconnection in the present embodiment is used in the copper integration application of contact hole, the semiconductor device of the diffusion barrier layer of the present embodiment comprises the lower layer copper wire layer 20, the low dielectric constant on the copper wire layer 20 The dielectric layer 21 and the contact hole 28 formed in the low dielectric constant dielectric layer 21, the diffusion barrier layer in this embodiment specifically includes the following structure:

[0053] The first tantalum layer 22 covers the bottom of the contact hole 28, that is, directly covers the surface of the exposed copper wire layer 20;

[0054] The tantalum nitride layer 23 covers the sidewall of the contact hole 28 and the first tantalum layer 22 at the bottom of the contact hole 28, without contacting the underlying copper wire layer 20; and

[0055] The second tantalum layer 24 covers the tantalum nitride layer 2...

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Abstract

The invention discloses a copper-interconnection diffusion barrier layer, a semiconductor device and a method for manufacturing the copper-interconnection diffusion barrier layer. The copper-interconnection diffusion barrier layer, the semiconductor device and the method have the advantages that tantalum or tantalum nitride films are deposited at three steps, tantalum-tantalum or tantalum-tantalum nitride-tantalum structures are formed at the bottoms of contact holes, tantalum nitride-tantalum structures are formed in the side walls of the contact holes, accordingly, the bottoms of the contact holes and lower-layer metal are high in binding force, stress between lower-layer copper wires and the diffusion barrier layer can be effectively reduced, the stress migration and electro-migration resistance can be improved, and the reliability of integrated circuits can be greatly improved; the side walls of the contact holes are high in mechanical strength, accordingly, shortcomings of ultra-low dielectrics in the aspect of mechanical strength can be effectively overcome, the quality of products can be improved, and the service lives of the products can be prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a diffusion barrier layer for copper interconnection, a semiconductor device and a manufacturing method thereof. Background technique [0002] With the continuous improvement of the integration level of integrated circuits, the performance of Al as an interconnection material has been difficult to meet the requirements of integrated circuits. Cu has lower resistivity and higher electromigration resistance than Al, and has been widely used in deep submicron technology. However, Cu is the culprit leading to device failure, mainly because Cu is a heavy metal that can rapidly diffuse in semiconductor silicon wafers and silicon dioxide under high temperature and electric field, causing problems in device reliability. Therefore, between the Cu wiring layer and the dielectric isolation layer, a diffusion barrier layer material that prevents Cu diffusion must be adde...

Claims

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Application Information

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IPC IPC(8): H01L23/532H01L21/768
Inventor 张飞虎冷江华赵龙
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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