High-power microwave plasma reaction unit for chemical vapor deposition of diamond films

A technology of chemical vapor deposition and high-power microwave, which is applied in the direction of gaseous chemical plating, electrical components, metal material coating technology, etc., can solve the problems of energy dispersion, poor focusing ability, lack of adjustment mechanism, etc., to achieve optimal adjustment, improve Focusing ability, effect of ensuring uniformity

Active Publication Date: 2015-03-04
TAIYUAN UNIV OF TECH
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  • Application Information

AI Technical Summary

Problems solved by technology

The device can overcome the shortcomings of lack of adjustment mechanism, dielectric window etching, poor focusing ability, difficult water cooling of key components, energy dispersion, and uneven gas distribution on the surface of the substrate that exist in various existing reaction devices to varying degrees. Can be applied to the uniform and rapid deposition of high-quality diamond films under high power conditions

Method used

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  • High-power microwave plasma reaction unit for chemical vapor deposition of diamond films
  • High-power microwave plasma reaction unit for chemical vapor deposition of diamond films
  • High-power microwave plasma reaction unit for chemical vapor deposition of diamond films

Examples

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Effect test

Embodiment 1

[0039] 1. Use a single crystal silicon wafer with a diameter of 65 mm and a thickness of 3 mm as the material of the substrate 15. First, the deposition surface of the circular substrate 15 is uniformly ground with diamond powder with a particle size of 5 μm, and then deionized water and acetone are used respectively Clean the surface of the substrate 15 ultrasonically, dry it with hot air, and place it on the top surface of the cylindrical abutment 10;

[0040] 2. Close the vacuum reaction chamber, and use a vacuum pump to pump the pressure in the reaction chamber below 1Pa;

[0041] 3. Turn on the circulating water cooling system and supply cooling water to each part of the device;

[0042] 4. In the reaction chamber of the device, the hydrogen gas with a flow rate of 600 sccm is introduced, and the pressure in the reaction chamber is adjusted to 2kPa;

[0043] 5. After setting the power of the microwave source with a frequency of 2.45 GHz to 2 kW, turn it on, and generate ...

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Abstract

The invention provides a high-power microwave plasma reaction unit for chemical vapor deposition of diamond films. The reaction unit comprises a cylindrical resonant cavity, wherein the cylindrical resonant cavity is divided into an upper cavity, an intermediate cavity and a lower cavity; the diameter of the intermediate cavity is smallest; the top of the upper cavity is conical, and a circular ring-shaped quartz microwave window and a discoid coupling antenna are mounted in the upper cavity; the bottom of the lower cavity is provided with a main gas outlet; a first cylindrical reflector, a second cylindrical reflector and a cylindrical base, which are assembled in a sleeving way, are mounted in the lower cavity and are lifted respectively through respective lifting mechanisms. The reaction unit provided by the invention is convenient to adjust, can accommodate high microwave power, has high microwave coupling capability and high microwave focusing capability, ensures uniform distribution of reactant gas, and can prepare high-purity diamond film material at a higher rate.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition of diamond films, in particular to a high-power microwave plasma reaction device for chemical vapor deposition of diamond films. Background technique [0002] Chemical vapor deposition (CVD) diamond film has many advantages such as high hardness, good thermal conductivity, small thermal expansion coefficient, excellent optical and electrical properties, fast sound propagation speed, and good dielectric properties, making it suitable for applications such as infrared optical windows, high-power LEDs, etc. , radiators for high-power and high-frequency electronic and optoelectronic devices and systems, high-performance radiation-resistant detectors and sensors, and other fields have broad application prospects. At present, the most commonly used methods for preparing diamond films are hot wire chemical vapor deposition (HFCVD), direct current arc plasma jet chemical vapor deposition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/517C23C16/511C23C16/513C23C16/26
CPCC23C16/26C23C16/511C23C16/513C23C16/517C23C16/274H01J37/32192H01J37/32247H01J37/32256
Inventor 于盛旺黑鸿君刘小萍安康高洁贺志勇
Owner TAIYUAN UNIV OF TECH
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