Novel anti-counterfeit mark and manufacturing method thereof

An anti-counterfeiting label and a new type of technology, applied in the field of anti-counterfeiting, can solve the problems of limited application, complex and tedious preparation process of anti-counterfeiting technology, and high cost

Active Publication Date: 2015-03-25
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation process of these anti-counterfeiting technologies is relati

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] A new type of anti-counterfeiting mark, comprising a plastic sheet and an invisible anti-counterfeiting pattern arranged on the surface of the plastic sheet, the surface of the plastic sheet includes an invisible anti-counterfeiting pattern area and a non-pattern area, and the invisible anti-counterfeiting pattern area is a thin film formed of micro-nano material silver particles Layer constitution, its preparation method, comprises the following steps:

[0067] (1) plasma surface treatment

[0068] The plastic sheet is treated with plasma surface for 30s and then used for subsequent inkjet printing;

[0069] (2) Inkjet printing

[0070] Disperse silver particles with a particle size of 20 nanometers in water to obtain a silver particle mixture with a mass concentration of 0.05%, add the resulting silver particle mixture to an inkjet printer, and input a preset anti-counterfeiting pattern into the computer, and the Printed on the plastic sheet treated with plasma surf...

Embodiment 2

[0072] A new type of anti-counterfeiting mark, comprising a glass slide and an invisible anti-counterfeiting pattern arranged on the surface of the glass slide, the surface of the glass slide includes an invisible anti-counterfeiting pattern area and a non-pattern area, and the invisible anti-counterfeiting pattern area is a film formed by micro-nano material gold particles Layer constitution, its preparation method, comprises the following steps:

[0073] (1) plasma surface treatment

[0074] The slides were treated by plasma surface for 25s before use;

[0075] (2) Paste the pattern film

[0076] Attach the PDMS film with the preset anti-counterfeiting pattern to the surface of the glass slide to cover the non-patterned area;

[0077] (3) Vacuum evaporation

[0078] Put the glass slide with PDMS film into the vacuum evaporation machine, and vacuum-deposit a layer of gold nanoparticles on the invisible anti-counterfeiting pattern area. The evaporation time is 5s. After tak...

Embodiment 3

[0080] A new type of anti-counterfeiting mark, including a silicon wafer and an invisible anti-counterfeiting pattern arranged on the surface of the silicon wafer. The surface of the silicon wafer includes an invisible anti-counterfeiting pattern area and a non-pattern area. The resist is formed after photolithography, and its preparation method comprises the following steps:

[0081] (1) spin coating

[0082] The liquid photosensitive polyimide photoresist is spin-coated on the surface of the silicon wafer, and the coating is carried out in two steps by using a coating machine: first, spin coating at a spin coating speed of 500 rpm for 30 seconds, and then spin coating at 1500 rpm 1min;

[0083] (2) Nanoimprinting

[0084] Align the imprint template with the micro-nano structure with the silicon wafer and press it into the photoresist, use UV curing (power 100W) for 10s, release the mold, and peel off the polyimide film to obtain a new type of anti-counterfeiting label.

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PUM

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Abstract

The invention provides a novel anti-counterfeit mark. The novel anti-counterfeit mark comprises an anti-counterfeit mark base and an invisible anti-counterfeit pattern, wherein the regional difference is formed through micro-nano materials and the anti-counterfeit mark base, so that the invisible anti-counterfeit pattern is formed, the surface of the anti-counterfeit mark base comprises an invisible anti-counterfeit pattern area and a non-pattern area, the invisible anti-counterfeit pattern area or the non-pattern area is composed of a film layer formed on the surface of the anti-counterfeit mark base through micro-nano materials, and the micro-nano materials include organic particles, inorganic particles, photoresist, photosensitive resin, metal, alloy, ceramic, polymer, active micromolecules, an oxide, a sulfide, a nitride and a carbide or a binary compound or polycompound composed of III-V or II-IV or IV-VI elements. According to the novel anti-counterfeit mark, the invisible anti-counterfeit pattern can appear when the anti-counterfeit mark is located at the position of an air blowing opening or encounters with water or steam, the invisible anti-counterfeit pattern can become invisible after water is volatilized, and the anti-counterfeit mark can be used for counterfeit prevention in the fields such as the medicine field, the food safety field and the financial field. The invention further provides a manufacturing method of the novel anti-counterfeit mark.

Description

technical field [0001] The invention relates to the field of anti-counterfeiting technology, in particular to a novel anti-counterfeiting label and a preparation method thereof. Background technique [0002] According to the "2013-2017 China Anti-Counterfeiting Industry Market Prospect and Investment Opportunity Analysis Report", the global market affected by counterfeit and shoddy products has reached 300 billion US dollars, and the annual turnover of counterfeit and shoddy products has accounted for 10% of the total world trade. In my country, the scale of counterfeit and shoddy products is 300-400 billion RMB, especially in industries such as tobacco, alcohol, agricultural trade, food, and cosmetics, which have become the hardest hit areas for counterfeit and shoddy products. Therefore, the anti-counterfeiting industry has become a sunrise industry in the 21st century. [0003] At present, the market capacity of my country's anti-counterfeiting industry has reached 800 b...

Claims

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Application Information

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IPC IPC(8): G09F3/02
CPCG09F3/0294
Inventor 杜学敏吴天准李腾跃韩学宁
Owner SHENZHEN INST OF ADVANCED TECH
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