A kind of gan-based enhanced hemt device and its preparation method
An enhanced device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low threshold voltage, reduced gate control capability, and current collapse, so as to reduce design difficulty and cost, Achieving enhanced device effects
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[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0038] figure 1 It is a schematic structural diagram of a GaN-based enhancement mode HEMT device according to an embodiment of the present invention, such as figure 1 As shown, in an embodiment of the present invention, the GaN-based enhanced HEMT device includes: a substrate 100, a GaN intrinsic layer 200, a barrier layer 300, a high hole concentration structure layer 500, a first metal electrode 611, a second The second metal electrode 612, the third metal electrode 613, the passivation medium layer 400 and the passivation protection layer 600, wherein:
[0039] The GaN intrinsic layer 200 and the barrier layer 300 are sequentially grown on the substrate 100;
[0040] The high hole concentration structure layer 500 co...
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