A kind of vertical conduction gan normally off type misfet device and its manufacturing method
A normally off and on technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of degraded electronic barrier layer quality, clean mask layer corrosion, and device performance degradation, etc., to improve the switching efficiency. Control ability, improve device performance, reduce the effect of on-resistance
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Embodiment 1
[0039] Such as Figure 9 Shown is a schematic diagram of the device structure of this embodiment, the device includes a gate, a source, a drain, an insulating layer, a conductive GaN substrate and an epitaxial layer thereon, and the epitaxial layer includes an n-type lightly doped A doped GaN layer and a secondary epitaxial layer grown on it in a selective region, the secondary epitaxial layer is an impurity filter layer 1, an electron blocking layer, an impurity filter layer 2, a non-doped epitaxial GaN layer and a heterostructure from bottom to top The barrier layer, the groove channel is formed after the second epitaxial growth, the surface of the groove channel and the heterostructure barrier layer is covered with an insulating layer, the gate is covered with the groove channel on the insulating layer, and the insulating layer is etched A source region is formed at both ends, and ohmic metal is evaporated on the source region to form a source in contact with the heterojunc...
Embodiment 2
[0052] Such as Figure 10 Shown is a schematic diagram of the device structure of this embodiment, which is similar to the structure of Embodiment 1, the only difference being that an n-type heavily doped GaN layer 13 with a thickness of 10-100 nm is inserted on the n-type lightly doped GaN layer 2 . The n-type heavily doped GaN layer 13 is in direct contact with the gate channel, which can effectively diffuse the gate channel current and disperse the concentrated electric field near the gate, thereby increasing the maximum breakdown voltage of the device.
Embodiment 3
[0054] Such as Figure 11 Shown is a schematic diagram of the device structure of this embodiment, which is similar to the structure of Embodiment 1, the only difference is that an AlN layer 14 is inserted between the non-doped GaN layer 6 and the heterostructure barrier layer 7, and the AlN layer can improve heterogeneity. 2DEG mobility in the channel of the matrix structure.
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