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A kind of method for preparing ceria nanocrystalline film

A technology of cerium dioxide and nanocrystals, which is applied in chemical instruments and methods, inorganic chemistry, rare earth metal compounds, etc., can solve the problems of long sol preparation cycle, easy cracking of film, shrinkage and cracking of film, etc., to solve the problem of long preparation cycle, Quality control, surface leveling effect

Inactive Publication Date: 2016-04-13
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of long sol preparation period and film shrinkage and cracking during spin coating, and effectively prevent the phenomenon that the film is easy to crack during heat treatment

Method used

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  • A kind of method for preparing ceria nanocrystalline film
  • A kind of method for preparing ceria nanocrystalline film
  • A kind of method for preparing ceria nanocrystalline film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Weigh 2.105 g of polyvinyl alcohol and add 40 ml of deionized water, heat and stir in a water bath at 95° C. for 2 h to obtain PVA with a mass fraction of 5%. Silicon wafers were ultrasonically cleaned with dilute nitric acid, acetone, and deionized water for 30 min, and then used as substrates after air drying.

[0036] (2) Weigh 3.151g of citric acid and dissolve it in 5ml of deionized water.

[0037] (3) Add about 3ml of concentrated nitric acid with a purity of 65-68% into the citric acid solution, and stir to make the solution pH<1.

[0038] (4) Weigh 2.173g of cerium nitrate hexahydrate and slowly dissolve it into the solution of step 3 and stir until completely dissolved.

[0039] (5) Measure 2-3ml of acetylacetone and add it to the solution obtained in step 4. After stirring, seal the beaker where the solution is placed to prevent the dispersant from volatilizing. Then put it in a water bath at 65°C and heat for about 6 hours.

[0040] (6) Open the beaker,...

Embodiment 2

[0044] (1) Weigh 4.21g of polyvinyl alcohol and dissolve it in 40ml of deionized water, stir in a water bath at 95°C for 3h to obtain 10wt.% PVA, ultrasonically clean the silicon wafer with dilute nitric acid, alcohol, acetone, and deionized water for 30min, and leave it at room temperature dry.

[0045] (2) Weigh 4.201 g of citric acid, add 5 ml of deionized water and stir until completely dissolved.

[0046] (3) Add about 4ml of concentrated nitric acid with a purity of 65-68% into the above solution, stir to make the solution pH<1.

[0047] (4) Weigh 2.173g of cerium nitrate hexahydrate and dissolve slowly into the solution of step 3, and stir until completely dissolved.

[0048] (5) Measure about 3ml of acetylacetone, add the solution obtained in step 4, seal the beaker where the solution is placed after stirring, and then put it into a water bath at 75°C and heat for about 5 hours.

[0049] (6) Open the beaker, when the solution changes from reddish brown to light yello...

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Abstract

The invention belongs to the technical field of preparing a nano-thin film material, and relates to a method for preparing a cerium oxide nanocrystalline thin film. According to the method, a sol-gel method is adopted and combined with a rotary coating technology, the gelation time is shortened by adding a proper amount of a hydrolysis control agent acetyl acetone, and the problem of being long in sol preparation period can be solved. The content of a dispersing agent is adjusted by adopting a water bath reflux and a solvent evaporation method, and the quality of the sol can be effectively controlled. The occurrence of sol coagulation phenomenon can be avoided by designing reasonable solution dropwise sequence. The problem that the thin film is shrunk and broken in rotary coating can be solved by adopting polyvinyl alcohol (PVA) with good hydrophilicity as a sol dispersing agent. The thin film is effectively prevented from easily breaking during thermal treatment by adopting a grading drying and low-speed temperature rise roasting method.

Description

technical field [0001] The invention belongs to the technical field of nano-film material preparation, and introduces a simple, cheap and fast method for preparing high-quality ceria nano-crystal film. Background technique [0002] Due to its excellent chemical stability, unique optical and electrical transmission properties, ceria has been widely used in corrosion protection, solar cells, lubricants, optoelectronic materials and other fields. Common methods for preparing ceria nanocrystalline films include magnetron sputtering [S.V.Steenberge, W.P.Leroy, A.Hubin, D.Depla, Applied Physics Letters, 105(2014) 111602], electrochemical deposition [X.W.Zhou, Y.F.Shen , Surface & Coatings Technology, 235(2013) 433-446], self-propagating method [J.Malleshappa, H.Nagabhushana, S.C.Sharma, D.V.Sunitha, N.Dhananjaya, C.Shivakumara, B.M.Nagabhushana, Journal of Alloys and Compounds, 590(2014) 131-139 ]Wait. The sol-gel method has the advantages of simple equipment requirements, stron...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01F17/00
Inventor 常永勤万康吕亮王卡张静龙毅
Owner UNIV OF SCI & TECH BEIJING
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