ZnO grading nanoarray on graphene substrate and preparation method and application thereof

A technology of graphene nanosheets and nanoarrays, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as uneven distribution, lower device operating temperature, and addition of foreign impurities, etc., to achieve Effects of avoiding contamination, easy access, and low defect density
CN104894640AInactive Publication Date: 2015-09-09TIANJIN UNIVERSITY OF TECHNOLOGY
12 Cites 8 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TIANJIN UNIVERSITY OF TECHNOLOGY
Publication Date
2015-09-09
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a ZnO grading nanoarray on a graphene substrate and a preparation method and application thereof. A graphene nanosheet substrate and grading ZnO nanoarray on the graphene nanosheet substrate area included. The grading ZnO nanoarray on the graphene nanosheet substrate is grown without catalytic CVD graphene. The invention also discloses the preparation method and application of the grading ZnO nanoarray. Compared with the prior art, the invention has the advantages of no need of deposition metal catalyst and deposition of other nucleation layer; and the prepared ZnO nanoarray can be transferred to a flexible substrate as well as to a high thermal conductivity substrate, and is conducive to the preparation of efficient, flexible, high-performance ZnO-based devices.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a ZnO hierarchical nano-array and a preparation method thereof, in particular to a ZnO hierarchical nano-array on a grown graphene substrate, a preparation method and an application thereof. Background technique

[0002] Zinc oxide ZnO (with a room temperature bandgap width of 3.37eV) is a direct bandgap semiconductor material of the II-VI wurtzite structure. The binding energy of bound excitons is as high as 60meV. At the same time, zinc oxide is rich in raw materials, low in price, and environmentally friendly. Advantages, are widely used in surface acoustic wave devices, microelectronics and optoelectronic devices and other fields. At present, one-dimensional ZnO nanoarrays have been confirmed to have unique physical properties, such as quantum size effects, surface effects, etc., and are currently the frontier and hot spot in the field of international nano-optoelectronic devices. One-dimensional ZnO nanoarrays are importa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More