Inverted solar cell structure adopting surface plasmon effect and manufacturing method thereof

A surface plasmon, solar cell technology, applied in the manufacturing/processing of organic semiconductor devices, circuits, photovoltaic power generation, etc. Separation and transmission, improving photoelectric conversion efficiency, avoiding the effect of corrosion

Inactive Publication Date: 2015-09-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF9 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, direct contact between metal nanoparticles and the active layer will form a charge recombination center, which ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inverted solar cell structure adopting surface plasmon effect and manufacturing method thereof
  • Inverted solar cell structure adopting surface plasmon effect and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0032] see figure 2 , the present invention also provides a method for preparing an inverted solar cell using the surface plasmon effect, comprising the following steps:

[0033] Step 1: Spin-coat a layer of ZnO precursor solution on the cathode transparent conductive substrate 10, and sinter at a predetermined temperature for a predetermined time to form a dense ZnO electron transport layer 20. The thickness of the ZnO electron transport layer 20 is 20 -50nm, the precursor solution is a mixed solution of zinc acetate, ethylene glycol methyl ether and ethanolamine, the precursor solution is colorless and transparent, the spin coating rate is 2000-5000rpm, the sintering temperature is 130°C-300°C, and the sintering time is 10min- 2h, obtain the dense ZnO thin film of high light transmittance, adopt this kind of method to prepare ZnO thin film, the step is simple, the obtained ZnO thin film is compact, good stability;

[0034] Step 2: Spin-coat a layer of metal-semiconductor c...

Embodiment

[0039] (1) First prepare Ag-TiO by two-step method 2 core-shell nanoparticles

[0040] Synthesize Ag nanoparticles first:

[0041] Mix 0.288g polyvinylpyrrolidone with 30mL ethylene glycol, stir magnetically until the polyvinylpyrrolidone is completely dissolved, and record it as solution A. Mix 0.288g of silver nitrate with 30mL of ethylene glycol, stir magnetically until the silver nitrate is completely dissolved, and record it as solution B. Mix solution A and solution B into a 100mL flask, slowly raise the temperature to 120°C under magnetic stirring, and react at 120°C for 10min. Then the product was cooled to room temperature, and washed by centrifugation with acetone, ethanol and deionized water to obtain Ag nanoparticles. The Ag nanoparticles were dispersed into deionized water, and the concentration was controlled at 1 mg / mL.

[0042] Ag nanoparticles coated TiO 2 :

[0043] Add 0.05mL tetrabutyl titanate into 10mL ethylene glycol, stir for 10h, and record it ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Sizeaaaaaaaaaa
Shell thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an inverted solar cell structure adopting a surface plasmon effect. The inverted solar cell structure comprises a cathode transparent conductive substrate, an electron transport layer, a metal-semiconductor core-shell nanoparticle layer, an active layer, an hole transport layer and an anode electrode, wherein the electron transport layer is manufactured on the cathode transparent conductive substrate; the metal-semiconductor core-shell nanoparticle layer is manufactured on the electron transport layer; the active layer is manufactured on the metal-semiconductor core-shell nanoparticle layer; the hole transport layer is manufactured on the active layer; and the anode electrode is manufactured on the hole transport layer. According to the inverted solar cell structure and the manufacturing method thereof, metal-semiconductor core-shell nanoparticles are introduced into an interface of the electron transport layer and the active layer, the effect of enhancing light absorption of metal surface plasmons can be exerted, the metal nanoparticles can be prevented from being in direct contact with the active layer to form a charge recombination center, and the core shell and the electron transport layer are in energy level match to facilitate charge separation and transport, thereby the photoelectric conversion efficiency of solar cells can be effectively improved.

Description

technical field [0001] The invention belongs to the technical field of organic photoelectric devices, and relates to an inverted organic solar cell, in particular to an inverted solar cell structure and a preparation method using the surface plasmon effect. Background technique [0002] Organic solar cells have the advantages of wide material sources, simple preparation process, and can be prepared on flexible substrates, and have received extensive attention in recent years. The traditional positive organic solar cell structure generally uses ITO glass as the anode, PEDOT:PSS as the hole transport layer, Al as the cathode, and the active layer is located between the PEDOT:PSS and Al electrodes. Solar cells with this structure have problems of poor life and stability. The acidic PEDOT:PSS solution has a corrosive effect on ITO, and the Al electrode with low work function is easily passivated by water vapor and oxygen in the air. In this context, an organic solar cell with ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/451H10K30/00H10K30/80H10K71/00Y02E10/549
Inventor 卢树弟曲胜春刘孔池丹李彦沛寇艳蕾岳世忠王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap