Complementary metal-oxide semiconductor fully-integrated 71-76GHz LC voltage controlled oscillator

A technology of oxide semiconductors and voltage-controlled oscillators, applied in power oscillators, electrical components, etc., can solve the problems of low cut-off frequency and millimeter-wave broadband voltage-controlled oscillators, and reduce parasitic capacitance and inductance The effect of small, high center frequencies

Inactive Publication Date: 2015-09-16
EAST CHINA NORMAL UNIV
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, there have been successful cases of E-band voltage-controlled oscillators based on GaAs, InP and other III-V semiconductor processes and BiCMOS processes. However, due to the relatively low cut-off frequency of active devices in CMOS processes, millimeter Wave broadband voltage controlled oscillator is always a big difficulty

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Complementary metal-oxide semiconductor fully-integrated 71-76GHz LC voltage controlled oscillator
  • Complementary metal-oxide semiconductor fully-integrated 71-76GHz LC voltage controlled oscillator
  • Complementary metal-oxide semiconductor fully-integrated 71-76GHz LC voltage controlled oscillator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0020] Refer to figure 1 , The structure of the circuit is a differential NMOS cross-coupling structure, which can provide differential output. The first NMOS transistor M1 and the second NMOS transistor M2 are cross-coupled to each other, and negative resistance is provided to offset the loss of the differential inductance, the first variable capacitor C1 and the second variable capacitor C2, so as to maintain oscillation. The width-to-length ratio of the first NMOS tube M1 and the second NMOS tube M2 is selected reasonably, which reduces its own parasitic capacitance on the one hand, and satisfies the vibration condition on the other hand. The transmission line differential inductance L1 is composed of a U-shaped transmission line inductance, and the middle tap of the transmission differential inductance L1 is connected to the power supply voltage. The parasitic capacitances from the drain of the first NMOS transistor M1 and the drain of the second NMOS transistor M2 to groun...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention discloses a complementary metal-oxide semiconductor fully-integrated 71-76GHz LC voltage controlled oscillator which is realized by using a differential NMOS cross-coupled structure, compared with a NMOS cross-coupled structure, contributed parasitic capacitance is smaller, and thus a higher oscillation frequency can be obtained. In addition, a U-shaped transmission line differential inductor is used by the differential inductor in the voltage controlled oscillator, an inductance value is small, and the oscillation frequency can be further improved. According to the oscillation circuit of the present invention, the tuning range is 70.97 GHz to 76.76GHz, the center frequency is smaller than 73.86GHz, phase noises are -89.47dBc/Hz and -116.2dBc/Hz at 1MHz and 10MHz frequency offsets, and the power consumption is 10.8 mW. The oscillation circuit can be the local oscillator signal source of an E-band wireless communication system and also can be the voltage controlled oscillator in a frequency synthesizer.

Description

Technical field [0001] The invention belongs to the technical field of millimeter wave integrated circuit design, in particular to a complementary metal oxide semiconductor fully integrated 71-76 GHz LC voltage-controlled oscillator, which can be used in a point-to-point high-speed wireless communication system. Background technique [0002] Wireless communication technology pursues higher-speed wireless communication transmission rates. An effective method is to increase the channel bandwidth. Millimeter wave carrier signals can provide a larger channel bandwidth, which is an ideal choice for high-speed wireless communication transmission. In October 2003, the Federal Communications Commission (FCC) of the United States released the E-band frequency band, of which 71-76GHz and 81-86GHz provide high and low wireless transmission frequency bands, with a total channel bandwidth of 10GHz. In recent years, there have been successful cases of E-band voltage-controlled oscillators base...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03B5/32
Inventor 石春琦张润曦严一宇赖宗声张健
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap