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Manufacturing method of non-invasive graphene nano-scale device

A nano-device and manufacturing method technology, applied in the field of electron beam lithography, can solve the problem of damaging graphene lattice and so on

Inactive Publication Date: 2015-09-23
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is no problem with electron beam direct writing to make patterns with line widths of 100nm and 200nm, but if the photoresist is directly exposed on graphene with electron beam, the lattice of graphene may be damaged

Method used

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  • Manufacturing method of non-invasive graphene nano-scale device
  • Manufacturing method of non-invasive graphene nano-scale device
  • Manufacturing method of non-invasive graphene nano-scale device

Examples

Experimental program
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Embodiment 1

[0056] Example 1: Make a 100-200nm wide, 200-500nm period, with a total finger size of 200 μm x 140 μm Stencil, and non-damaging graphene nanodevices fabricated by Stencil lithography:

[0057] (1) Use LPCVD to grow 300nm silicon nitride on the silicon substrate. The result is as figure 1 shown.

[0058] (2) Spin-coat 300-600 nm PMMA on silicon nitride. The result is as figure 2 shown.

[0059] (3) Bake the spin-coated PMMA silicon wafer in an oven at a temperature of 180°C for 60 minutes or more.

[0060] (4) Measure the thickness of the PMMA glue with a step meter. If the required height is reached, go to (5), otherwise return to step (2).

[0061] (5) Using the above PMMA as a masking layer, design a pattern, expose it by electron beam direct writing, and conduct a dose test.

[0062] (6) Develop with developer IMBK and IPA, IMBK:IPA=1:3, developing temperature 23°C, time 1min. The result is as image 3 As indicated, fix with isopropanol for 30 seconds, and ...

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Abstract

The invention belongs to the technical field of electron beam lithography, in particular to a method for manufacturing a graphene nano-scale device with electron beam lithography, a stencil and optical lithography. The method comprises the following steps: coating a silicon nitride membrane of 100-300nm with PMMA (Polymethyl Methacrylate) of 300-600nm in a spinning way for serving as a mask, directly writing an interdigital electrode which is 100-200nm in width and 200-500nm in period with electron beam lithography, and etching the silicon nitride membrane of 100-300nm with RIE (Reactive Ion Etching) to obtain the stencil; evaporating gold of 100nm onto graphene in which silicon is taken as a substrate through thermal evaporation by taking the stencil as a mark plate; and defining a pads region with optical lithography, evaporating the gold through thermal evaporation, and performing lift off. According to a required graphical process condition, an electron beam lithography machine, RIE, an optical lithography machine, a SEM (Scanning Electron Microscope), thermal evaporation and the like are required. Through the tools, graphical processing of a tiny device can be realized, and the non-invasive graphene nano-scale device is manufactured.

Description

technical field [0001] The invention belongs to the technical field of electron beam lithography, and in particular relates to a method for fabricating non-damaging graphene nano-devices by using two patterning techniques of electron beam lithography and optical lithography. Background technique [0002] Due to the characteristics of high mobility, high speed, zero band gap, and linearly distributed energy bands, graphene has the potential to be used as a terahertz photoconductive device. There is no problem with electron beam direct writing to make patterns with line widths of 100nm and 200nm, but if the photoresist is directly exposed on graphene with electron beam, the lattice of graphene may be damaged. In order to overcome the above difficulties, stencil photolithography is used to make interdigitated electrodes. With Stencil, there is no need to use photoresist as a mask, which is more convenient, low cost, high output, and Stencil can be used many times. The optical...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/027G03F7/20B82Y40/00
CPCH01L21/02H01L21/027
Inventor 陈宜方李俊洁刘建朋陆冰睿邵金海
Owner FUDAN UNIV
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