Fabrication method and structure of a semiconductor power device structure

A technology of power devices and semiconductors, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems affecting high-frequency performance of devices, long device shutdown time, etc., to improve device performance, improve breakdown voltage, Effect of Reducing On-Resistance

Active Publication Date: 2018-07-24
工业和信息化部电子第五研究所华东分所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the device is turned on, there are a large number of holes in the drift region. When the device is turned off, the recombination and extraction of minority carriers takes a certain amount of time, that is, the so-called minority carrier storage effect, which will form a so-called "tailing current". Makes the off-time of the device longer and affects the high-frequency performance of the device

Method used

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  • Fabrication method and structure of a semiconductor power device structure
  • Fabrication method and structure of a semiconductor power device structure
  • Fabrication method and structure of a semiconductor power device structure

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Experimental program
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Effect test

Embodiment 1

[0028] refer to figure 1 , figure 1 It is a schematic flow chart of a method for preparing a semiconductor power device structure according to an embodiment of the present invention.

[0029] In Embodiment 1, the preparation method of the semiconductor power device structure includes:

[0030] Step 101, performing etching on the thick film substrate to form a Trench layer window, and performing oblique angle implantation and bottom implantation on the thick film substrate to form an N-type heavily doped region;

[0031] Step 102, perform rapid annealing after implantation, and perform surface oxidation to form a thin layer of SiO on the surface of the Trench layer window 2 Floor;

[0032] Step 103, carry out SiO 2 Deposition, formation of deep oxygen trench layer, P-well implantation, N+ implantation, P+ implantation and rapid annealing;

[0033] Step 104, polysilicon window etching, heavily doped polysilicon deposition, metal field plate window etching, metal deposition,...

Embodiment 2

[0050] refer to figure 2 , figure 2 It is a schematic diagram of the structure of the semiconductor power device of the embodiment of the present invention.

[0051] In Embodiment 2, the semiconductor power device structure includes:

[0052] Source, source metal, gate metal, drain, drain metal, source body region, polysilicon, metal field plate, N-type heavily doped region, oxygen Trench layer, N-type drift region, buried oxide layer, P-type lining end;

[0053] The P-type substrate is on the bottom layer of the semiconductor power device structure, the buried oxide layer is on the P-type substrate, the N-type drift region is on the buried oxide layer, and the N-type The heavily doped region is above the N-type drift region, the oxygen Trench layer is above the N-type heavily doped region, and the metal field plate is a vertical field plate with multiple layers of different lengths. A heavily doped n-type layer is injected into the N-type drift region near the surface o...

Embodiment 3

[0058] refer to image 3 , image 3 It is another schematic diagram of the structure of the semiconductor power device of the embodiment of the present invention.

[0059] Figure 4 It is a schematic diagram of the electric field of a semiconductor power device according to an embodiment of the present invention.

[0060] Specifically, the breakdown voltage of the LDMOS structure of a lateral power device is determined by both the lateral withstand voltage and the vertical withstand voltage, and within a certain range, the lateral withstand voltage of the device is proportional to the length of the drift region and inversely proportional to the doping concentration of the drift region , while the on-resistance of the device is just the opposite. Therefore, there is a contradictory relationship between the breakdown voltage and the on-resistance of the lateral power device.

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Abstract

The embodiment of the present invention discloses a preparation method and structure of a semiconductor power device structure. In the Trench layer of the traditional lateral power device Trench LDMOS structure, multiple layers of vertical metal field plates with different depths are introduced, and at the same time, a layer of vertical metal field plates is introduced into the drift region. heavily doped n-type layer. In terms of improving the breakdown voltage of the device, multi-layer metal field plates with different lengths can introduce multiple new electric field peaks in the drift region, and at the same time introduce high surface electric fields into the body to avoid premature breakdown of the device on the surface; after full depletion The heavily doped n-type layer increases the surface charge density of the trench layer, increases the electric field of the trench layer and the drift region, and increases the breakdown voltage of the device. In terms of reducing the on-resistance of the device, the deep oxygen Trench layer reduces the length of the lateral drift region.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a method and structure for preparing a semiconductor power device structure. Background technique [0002] Power integrated circuits are sometimes called high-voltage integrated circuits, which are an important branch of modern electronics. They can provide new circuits with high speed, high integration, low power consumption and radiation resistance for various power conversion and energy processing devices, and are widely used in electric power Daily consumption fields such as control systems, automotive electronics, display device drivers, communications and lighting, as well as many important fields such as national defense and aerospace. The rapid expansion of its application scope has also put forward higher requirements for the high-voltage devices in its core part. [0003] For the power device MOSFET, under the premise of ensuring the br...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/40H01L21/336
CPCH01L29/0611H01L29/404H01L29/407H01L29/66568H01L29/7825H01L29/0878H01L29/7824
Inventor 夏超张琦
Owner 工业和信息化部电子第五研究所华东分所
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