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A doped ceria barrier layer and preparation method thereof

A ceria and barrier layer technology, applied in the field of doped ceria barrier layer and its preparation, can solve the problems of reducing surface roughness, single function of the barrier layer, etc. smooth surface effect

Active Publication Date: 2018-01-02
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the functions of these barrier layers are relatively single, and cannot simultaneously improve the c-axis orientation, reduce surface roughness, and improve the ability to block the diffusion of nickel atoms.

Method used

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  • A doped ceria barrier layer and preparation method thereof
  • A doped ceria barrier layer and preparation method thereof
  • A doped ceria barrier layer and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The chemical composition of the doped ceria barrier layer in this embodiment is Mo 0.2 Ce 0.75 La 0.05 o 2.175 .

[0030] The preparation method of this barrier layer is:

[0031] Step 1. Dissolve organic molybdenum salt, organic cerium salt and organic rare earth salt in propionic acid according to the molar ratio of Mo:Ce:La=0.2:0.75:0.05, and stir evenly at a constant temperature at 90°C to obtain metal A precursor solution with an ion molar concentration of 0.8mol / L, the organic molybdenum salt is oxymolybdenum acetylacetonate, the organic cerium salt is cerium propionate, and the organic rare earth salt is lanthanum acetate;

[0032] Step 2. Dip-coat the precursor solution described in step 1 on the substrate by dipping and pulling method to obtain a wet film covering the surface of the substrate; the substrate is a NiW metal substrate; the pulling speed of the dipping and pulling method is 1m / h;

[0033] Step 3: Raise the temperature inside the tube furnace ...

Embodiment 2

[0036] The chemical composition of the doped ceria barrier layer in this embodiment is Mo 0.05 Ce 0.75 Dy 0.2 o 1.95 .

[0037] The preparation method of this barrier layer is:

[0038] Step 1. Dissolve organic molybdenum salt, organic cerium salt and organic rare earth salt in propionic acid according to the molar ratio of Mo:Ce:Dy=0.05:0.75:0.2, and stir evenly at a temperature of 80°C to obtain metal A precursor solution with an ion molar concentration of 0.1mol / L, the organic molybdenum salt is molybdenum acetylacetonate, the organic cerium salt is cerium acetate, and the organic rare earth salt is dysprosium acetate;

[0039] Step 2. Dip-coat the precursor solution described in step 1 on the substrate by dipping and pulling method to obtain a wet film covering the surface of the substrate; the substrate is a NiW metal substrate; the pulling speed of the dipping and pulling method is 10m / h;

[0040] Step 3: Raise the furnace temperature of the tube furnace to 1100°C, p...

Embodiment 3

[0043] The chemical composition of the doped ceria barrier layer in this embodiment is Mo 0.24 Ce 0.75 La 0.01 o 2.235 .

[0044] The preparation method of this barrier layer is:

[0045] Step 1. Dissolve organic molybdenum salt, organic cerium salt and organic rare earth salt in propionic acid according to the molar ratio of Mo:Ce:La=0.24:0.75:0.01, and stir at a constant temperature at 120°C to obtain metal A precursor solution with an ion molar concentration of 0.5 mol / L, the organic molybdenum salt is oxymolybdenum acetylacetonate, the organic cerium salt is cerium acetylacetonate, and the organic rare earth salt is lanthanum propionate;

[0046] Step 2. Dip-coat the precursor solution described in step 1 on the substrate by dipping and pulling method to obtain a wet film covering the surface of the substrate; the substrate is a NiW metal substrate; the pulling speed of the dipping and pulling method is 5m / h;

[0047] Step 3: Raise the temperature inside the tube fur...

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Abstract

The invention discloses a doped ceria barrier layer, the chemical composition of the barrier layer is MoxCe0.75RE0.25‑xOδ, wherein 0.05≦x<0.25, δ=1.5x+1.875, and the RE is a rare earth element Dy or La. In addition, the present invention also discloses a method for preparing the doped ceria barrier layer. The method is as follows: 1. Dissolving organic molybdenum salt, organic cerium salt and organic rare earth salt in propionic acid to obtain a precursor solution; 2. The precursor solution is dip-coated on the substrate to obtain a wet film covering the surface of the substrate; third, the wet film is subjected to heat preservation and heat treatment to obtain a doped ceria barrier layer on the surface of the substrate. The barrier layer of the invention has a sharp c-axis orientation, a smooth surface without microcracks, and can effectively block the diffusion of nickel atoms.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting materials, and in particular relates to a doped ceria barrier layer and a preparation method thereof. Background technique [0002] In the second-generation high-temperature superconducting coated conductor, which is composed of a metal substrate, a barrier layer, a superconducting layer and a protective layer, the barrier layer is the key functional layer, which mainly undertakes the two functions of texture transfer and barrier diffusion. The crystal structure of ceria belongs to the cubic fluorite type, which has the advantages of small lattice mismatch and good chemical compatibility with YBCO, and is generally used as a barrier layer material. [0003] In order to improve the texture orientation and barrier ability of ceria barrier layer, many research groups introduced rare earth ion doping into ceria material by chemical solution deposition technique. The growth be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L39/12H01L39/24H10N60/85H10N60/01
Inventor 金利华李成山冯建情于泽铭王耀张平祥
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH