GaN-based low leakage current cantilever beam switch differential amplifier

Abstract

The invention provides a GaN-based low leakage current cantilever beam switch differential amplifier which has the remarkable advantages of being small in size, easy to integrate and high in switching speed. An MESFET with a cantilever beam switch is used for replacing a traditional MESFET. The cantilever beam switches of N-type MESFETs used in the differential amplifier are suspended above gate electrodes of the MESFETs. Schottky contact is formed between the gate electrodes of the MESFETs and a substrate, and a depletion layer is formed in the substrate below the gate electrodes. The pull-down voltage of each cantilever beam switch is designed to be equal to the threshold voltage of each MESFET. When the voltage applied over the cantilever beam switch and a corresponding pull-down electrode is greater than the threshold voltage of the corresponding MESFET, a cantilever beam is pulled down to be clung to the corresponding gate electrode, and at the moment, the width of a depletion region in a channel region of the MESFET is reduced, and the conductivity of the channel region is improved to amplify AC signals on the basis. When the voltage applied over the cantilever beam switch and the corresponding pull-down electrode is smaller than the threshold voltage of the corresponding MESFET, the cantilever beam cannot be pulled down, and the MESFET cannot be broken through, so that current leakage of the corresponding gate electrode is eliminated, and the power consumption of the differential amplifier is reduced.

Description

technical field [0001] The invention provides a gallium nitride-based low-leakage current cantilever switch MESFET (metal-semiconductor field effect transistor) differential amplifier, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the rapid development of wireless communication technology, traditional silicon-based devices can no longer meet the requirements of high frequency, high efficiency and high temperature resistance, so various new devices and semiconductor materials are constantly being proposed. Transistors made of gallium nitride materials have high electron mobility, strong radiation resistance, and a large operating temperature range. GaN FETs can be used in high frequency and ultra high frequency amplifier circuits. Nowadays, the size of transistors has developed to the nanometer level, and the integration degree of the corresponding integrated circuit unit area is still continuously improving, and ...

AI Technical Summary

Problems solved by technology

Nowadays, the size of transistors has developed to the nanometer level, and the integration degree of the corresponding integrated circuit unit area is still continuously improving, and the functions of the chip are becoming more and more complex, showing a state of digital-analog hybrid, and the processing speed of the chip is getting higher and higher. ; Followed by the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduce the life of the chip, And it will affect the stability of the chip

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