Preparation method of TiN nano-material
A nanomaterial, titanium nitride technology, applied in the preparation of titanium nitride nanomaterials, in the field of nanomaterials, can solve the problems of low purity and complex process, achieve low roasting temperature, short reaction time, simple and controllable preparation process Effect
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Embodiment 1
[0059] A kind of preparation method of TiN nanometer material under lower temperature, it is characterized in that comprising the following steps:
[0060] (1) At 40°C, dissolve 0.3g of surfactant in 4g of solvent and mix uniformly, then add 0.5ml of organic titanium source and 0.3g of inorganic salt, stir and mix evenly, and then add 0.4g of mass percentage concentration It is 20% ethanol solution of phenolic resin, finally add 0.24g organic silicon source, fully stir in 40°C water bath to form a homogeneous solution, then pour it into a watch glass, put it in a blast drying oven at 40°C for 24h, and then put it in 100°C The cross-linking was carried out in a forced air drying oven at ℃. Thus, a transparent film was obtained.
[0061] The amount of the above-mentioned used surfactant, solvent, organic titanium source, inorganic salt, silicon source, and mass percent concentration of phenolic resin solution is 20%, calculated by mass ratio, surfactant: solvent: organic titani...
Embodiment 2
[0075] A kind of preparation method of TiN nanometer material under lower temperature, it is characterized in that comprising the following steps:
[0076] (1) At 40°C, dissolve 0.6g of surfactant in 12g of solvent and mix uniformly, then add 1.8ml of organic titanium source and 1.5g of inorganic salt, stir and mix evenly, and then add 1.2g of mass percentage concentration It is a 20% ethanol solution of phenolic resin, and finally add 0.6g of organic silicon source, fully stir in a water bath at 40°C to form a homogeneous solution, then pour it into a watch glass, put it in a blast drying oven at 40°C for 24h, and then put it in 100°C The cross-linking was carried out in a forced air drying oven at ℃. Thus, a transparent film was obtained.
[0077] The amount of the above-mentioned used surfactant, solvent, organic titanium source, inorganic salt, silicon source, and mass percent concentration of phenolic resin solution is 20%, calculated by mass ratio, surfactant: solvent: ...
Embodiment 3
[0088]A kind of preparation method of TiN nanometer material under lower temperature, it is characterized in that comprising the following steps:
[0089] (1) At 40°C, dissolve 1g of surfactant in 30g of solvent and mix uniformly, then add 5ml of organic titanium source and 4g of inorganic salt, stir and mix evenly, and then add 4g of 20% by mass concentration Phenolic resin ethanol solution, finally add 3g of organic silicon source, fully stir in a 40°C water bath to form a homogeneous solution, then pour it into a watch glass, put it in a blast drying oven at 40°C for 24 hours, and then put it in a blast drying oven at 100°C in cross-linking. Thus, a transparent film was obtained.
[0090] The amount of the above-mentioned used surfactant, solvent, organic titanium source, inorganic salt, silicon source, and mass percent concentration of phenolic resin solution is 20%, calculated by mass ratio, surfactant: solvent: organic titanium source: inorganic salt: Silicon source: p...
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