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Preparation method for nanocrystal-doped tungsten oxide electrochromic film pattern

A thin-film patterning and electrochromic technology, applied in the fields of optoelectronics and microelectronics, can solve the problems of easily corroded substrates, low efficiency, and inability to prepare thin-film patterns, and achieve the effects of good electrochromic performance, high quality, and clear quality.

Inactive Publication Date: 2015-12-16
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing nanocrystal-doped tungsten oxide electrochromic thin-film graphics, which solves the problem of easy corrosion of substrates, low efficiency and inability to prepare large-area thin-film graphics when using corrosive solvents in the preparation process of existing thin-film graphics. The problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Step 1, the tin dichloride SnCl of 0.386g 2 2H 2 O was dissolved in 4 mL of absolute ethanol, and dry nitrogen was passed into the reaction chamber, and refluxed alternately at 75 ° C and 45 ° C (every 2 hours) for 24 hours to obtain a clear and transparent yellow sol A. Add 0.032g of trifluoroacetic acid to the solution, and continue to reflux at 45°C for 5 hours under nitrogen atmosphere to obtain FTO sol B. The room temperature was 0°C, and after uniform stirring for 2 hours under a dry nitrogen atmosphere, a clear and transparent cyan sol C was obtained; then, B and C were mixed, and stirred at room temperature under a dry nitrogen atmosphere for 0.5 hours to obtain a cyan-yellow composite sol D; Next, add 20.82g of phenylacetone to 378mL of absolute ethanol, stir at room temperature for 2 hours under a dry nitrogen atmosphere, and obtain solution E; finally, mix sol D with solution E, and reflux at 60°C under a dry nitrogen atmosphere After 2 hours, sol F was pre...

Embodiment 2

[0033] Step 1, the tin dichloride SnCl of 0.386g 2 2H 2 O was dissolved in 4 mL of absolute ethanol, and dry nitrogen was passed into the reaction chamber, and refluxed alternately at 75 ° C and 45 ° C (every 2 hours) for 24 hours to obtain a clear and transparent yellow sol A. Add 0.032g of trifluoroacetic acid to the solution, and continue to reflux at 45°C for 5 hours under nitrogen atmosphere to obtain FTO sol B. At the same time, dissolve 16.93g of tungsten chloride in 75mL of absolute ethanol, and use a sufficient amount of ice water The room temperature was 0°C, and after uniform stirring for 2 hours under a dry nitrogen atmosphere, a clear and transparent cyan sol C was obtained; then, B and C were mixed, and stirred at room temperature under a dry nitrogen atmosphere for 0.5 hours to obtain a cyan-yellow composite sol D; Next, add 4.471g of phenylacetone into 50mL of absolute ethanol, stir at room temperature for 2 hours under a dry nitrogen atmosphere, and obtain so...

Embodiment 3

[0037] Step 1, the tin dichloride SnCl of 0.386g 2 2H 2O was dissolved in 4 mL of absolute ethanol, and dry nitrogen was passed into the reaction chamber, and refluxed alternately at 75 ° C and 45 ° C (every 2 hours) for 24 hours to obtain a clear and transparent yellow sol A. Add 0.032g of trifluoroacetic acid to the solution, and continue to reflux at 45°C for 5 hours under a nitrogen atmosphere to obtain FTO sol B. The temperature was 0°C, and after uniform stirring for 2 hours under a dry nitrogen atmosphere, a clear and transparent cyan sol C was obtained; then, B and C were mixed, and after stirring at room temperature under a dry nitrogen atmosphere for 0.5 hours, a cyan-yellow composite sol D was obtained; then , add 13.89g of phenylacetone to 22mL of absolute ethanol, stir at room temperature under a dry nitrogen atmosphere for 2h to obtain solution E; finally, mix sol D with solution E, and reflux at 60°C for 4h under a dry nitrogen atmosphere , the sol F was prepa...

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Abstract

The invention discloses a preparation method for a nanocrystal-doped tungsten oxide electrochromic film pattern. The preparation method comprises the following concrete steps: preparing a photosensitive FTO-doped tungsten oxide sol; coating an FTO electro-conductive glass substrate with the sol so as to prepare an FTO-doped tungsten oxide sol film with an ultraviolet light-sensitive characteristic; subjecting the sol film to exposure and development so as to obtain an FTO-doped tungsten oxide sol film with a pattern; and putting the sol film with the pattern into an atmosphere furnace for heat treatment so as to obtain the nanocrystal-doped tungsten oxide electrochromic film pattern. The preparation method is simple and can prepare the FTO nanocrystal-doped tungsten oxide electrochromic film pattern with a large area without special vacuum environment and reaction chamber; resists and corrosive mediums are not needed in the preparation process, so no damage is posed to the substrate; and an electrochromic film with visible-near infrared double-frequency modulation can be prepared and has better electrochromic performance compared with a common amorphous tungsten oxide film.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics and microelectronics, and in particular relates to a method for preparing electrochromic thin film patterns doped with nanocrystals and tungsten oxide. Background technique [0002] Tungsten oxide thin film has important application value in the display field due to its excellent electrochromic properties. Doping it with an appropriate amount of FTO (fluorine-doped tin oxide) nanocrystals can effectively improve its electrochromic performance. The display device prepared by the thin film has the characteristics of no blind angle, high contrast, low energy consumption, etc., and can be used as electronic paper, signage and the like. [0003] Pattern etching is a key process in the manufacture of display devices, which directly affects the display effect of the device. At present, the preparation method of inorganic thin film graphics is to separate the film making and pattern making, that i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C03C17/23
Inventor 任洋赵高扬王秋红李颖
Owner XIAN UNIV OF TECH
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