A kind of chemical synthesis method of copper-zinc-tin-sulfur absorbing layer thin film
A copper-zinc-tin-sulfur, chemical synthesis technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of uncontrollable film composition, poor film-forming crystal quality, low film-forming speed efficiency, etc., to improve clean quality, Improved performance, low cost effect
Inactive Publication Date: 2017-09-29
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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Problems solved by technology
The growth direction of the film prepared by the electrochemical method is controllable, but its film formation rate is low, the composition control is poor, and the waste liquid generated during the film formation process pollutes the environment; the sol-gel method is easy to implement and the composition is controllable, but its impurity More, the quality of film-forming crystals is poor, and the efficiency is low; the hydrothermal method, also called the hydrazine method, prepares Cu 2 ZnSnS 4 The absorption layer cell has high efficiency, but the reaction needs to be carried out under high pressure, and the composition of the film is uncontrollable
Method used
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Embodiment
[0030] The chemical synthesis method of the copper-zinc-tin-sulfur absorbing layer film comprises the following steps:
[0031] (S10) Prepare Cu from copper source, zinc source, tin source and sulfur source by hydrothermal method 2 ZnSnS 4 Nanocrystalline:
[0032] (S11) Take 0.2mol CuCl respectively 2 • 2H 2 O, 0.1mol ZnCl 2 , 0.1mol SnCl 2 • 2H 2 O and 0.4mol CS(NH 2 ) 2 , after mixing evenly, dissolve in 50mL ethylene glycol solvent;
[0033] (S12) ultrasonically dispersing and ultrasonically breaking the above mixed solution until the solute is completely dissolved in the solvent;
[0034] (S13) Take 40mL of the mixed solution prepared above, transfer it to a 50mL hydrothermal kettle, and conduct a hydrothermal reaction at 570°C for 12h to prepare Cu 2 ZnSnS 4 Nanocrystalline;
[0035] (S20) on the prepared Cu 2 ZnSnS 4 Centrifugal purification of nanocrystals: add deionized water and ethanol to the above hydrothermal reaction product, and remove organic impu...
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Abstract
The invention discloses a chemical synthesis method of a Cu2ZnSnS4 absorbing layer thin film. The method comprises that (S10) copper, zinc, tin and sulfur sources are used to prepare Cu2ZnSnS4 nanometer crystal in a hydrothermal method; (S20) centrifugal purification is carried out on the prepared Cu2ZnSnS4 nanometer crystal; (S30) the purified Cu2ZnSnS4 nanometer crystal is uniformly dispersed in an organic solvent, and is sintered at low temperature after screen printing film forming to obtain a preformed film; and (S40) post curing is carried out on the preformed film obtained in the step (S30) to obtain the Cu2ZnSnS4 absorbing layer thin film. The prepared Cu2ZnSnS4 absorbing layer thin film is uniform in components and includes few impurities, is suitable for thin film solar cells, and can serve as the absorption layer of a Cu2ZnSnS4 thin film solar cell to effectively improve the electro-optical performance of the cell; and the method of the invention is simple in operation and devices and controllable in the process, and is thus, suitable for research, development as well as middle and small scaled production of the Cu2ZnSnS4 thin film solar cells.
Description
technical field [0001] The invention relates to the technical field of solar cell device preparation, in particular to a chemical synthesis method of a copper-zinc-tin-sulfur absorbing layer thin film. Background technique [0002] copper indium gallium selenide (CuIn x Ga 1-x Se 2 ) Thin-film solar cells have the advantages of high conversion efficiency, good long-term stability, strong radiation resistance, and laboratory photoelectric conversion efficiency exceeding 20%, and are considered to be one of the most promising thin-film solar cells. However, CuIn x Ga 1-x Se 2 In, Ga, and Se in the absorbing layer are rare elements and have certain toxicity, which seriously restricts CuIn x Ga 1-x Se 2 Industrialization development of thin film batteries. The semiconductor compound copper zinc tin sulfur (Cu 2 ZnSnS 4 ) is considered to be the most likely to replace CuIn x Ga 1-x Se 2 Material of the absorbent layer. Cu 2 ZnSnS 4 It is a p-type semiconductor w...
Claims
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IPC IPC(8): H01L31/18
CPCH01L31/18
Inventor 杨盼赵晓冲杨蕊竹杨锁龙杨瑞龙
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS