Aluminum oxide-gallium oxide mixed-crystal material for wide-band-gap semiconductors

Abstract

The invention relates to an aluminum oxide-gallium oxide mixed-crystal material for wide-band-gap semiconductors and a preparation method therefor. The structural formula of the aluminum oxide-gallium oxide mixed-crystal material is Ga(2-2x)Al2xO3, wherein the mole ratio x of doped aluminum oxide is 0-50%. According to the aluminum oxide-gallium oxide mixed-crystal material for the wide-band-gap semiconductors and the preparation method therefor, a mixed crystal is formed in a manner of maintaining the original gallium oxide crystal structure, has very high optical quality, is free of defects such as cracking, scattering particles and bubbles and is uniform in color; and through doping, the ultraviolet absorption cutoff edge of the ultraviolet absorption cutoff edge extends to 210-255nm, so that the aluminum oxide-gallium oxide mixed-crystal material is a very excellent deep-ultraviolet substrate material.

Description

technical field [0001] The invention relates to the field of artificial crystals, in particular to an aluminum oxide-gallium oxide mixed crystal material used for wide bandgap semiconductors. Background technique [0002] β-Ga 2 o 3 It is a wide bandgap compound semiconductor material with a direct bandgap. The bandgap width is about 4.8-4.9eV. It is the transparent conductive material with the widest bandgap known so far. It has many advantages such as large band gap, high breakdown field strength, fast saturated electron drift speed, small dielectric constant, high thermal conductivity, stable chemical properties, etc. It is transparent from ultraviolet to visible light bands, compared with traditional transparent Conductive materials (TCOs) can be used to fabricate a new generation of semiconductor optoelectronic devices operating in the shorter wavelength range. [0003] β-Ga 2 o 3 The material can be used as the substrate material of GaN. It has both the high trans...

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Problems solved by technology

[0006] (1) In order to meet the requirements for the light transmittance of the substrate, deep ultraviolet LED materials usually have to be grown on substrates such as sapphire and AlN, and the heterogeneous epitaxial growth technology of materials is generally too difficult, resulting in generally poor material quality;

[0007] (2) In order to achieve deep ultraviolet luminescence, the Al component content of the active layer AlGaN should usually reach 45%-50%. AlGaN materials with high aluminum components still have the problem of low doping concentration, which also causes the electro-optic conversion efficiency of deep ultraviolet LEDs. Main reason for generally low (1-2%)

[0008] After more than ten years of development, although some progress has been made, overall, the deep ultraviolet LED technology based on the GaN system is far from mature

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