Anti-cleavage suspended grinding fluid for gallium oxide wafer and preparation method thereof

A polishing liquid and gallium oxide technology, applied in the field of anti-cleavage suspension polishing liquid and its preparation, can solve the problems of low wafer surface quality, low processing efficiency, cleavage cracks, etc., and achieve stable and efficient rough/fine grinding processing, Ensure high-quality, high-stability results

Active Publication Date: 2016-01-27
YANCHENG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Purpose of the invention: The present invention is aimed at the problems of low rough / finish grinding processing efficiency of gallium oxide wafers, low wafer surface quality, and easy occurrence of cleavage cracks and scratches in the prior art. Gallium wafer anti-cleavage suspension slurry and preparation method thereof

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1 The preparation method of gallium oxide wafer anti-cleavage suspension grinding liquid, comprises the following steps:

[0033] (1) Mix 2450g of kerosene and 1400g of alkane, and use an electric magnetic stirring device to fully stir and fuse for 15 minutes to obtain a grinding liquid base liquid, which is left to stand and cooled to room temperature for later use;

[0034] (2) Under the condition of stirring by electric magnetic stirring device, add 450g of alumina micropowder of W7 type, 200g of polyvinyl alcohol, and 400g of octylphenol polyoxyethylene ether into the base liquid obtained in step (1), and fully stir for about 15 minutes, then use ultrasonic dispersion, ultrasonic dispersion is 500W, and the dispersion time is 15 minutes, to obtain the intermediate liquid of the grinding liquid, stand still, cool to room temperature, and set aside;

[0035] (3) Add 1g of polydimethylsiloxane, 1g of isothiolinone, and 2.5g of isopropyl ketone to the interme...

Embodiment 2

[0038] Embodiment 2 The preparation method of gallium oxide wafer anti-cleavage suspension slurry, comprising the following steps:

[0039] (1) Mix 2280g of kerosene and 1500g of alkane, and use an electric magnetic stirring device to fully stir and fuse for 15 minutes to obtain a grinding liquid base liquid, which is left to stand and cooled to room temperature for later use;

[0040] (2) Under the condition of stirring with an electric magnetic stirring device, add 480g of alumina micropowder of W10 type, 110g of polyvinyl alcohol, 110g of cyanoethyl cellulose, and 420g of nonylphenol polyoxyethylene ether to the product obtained in step (1). In the base liquid, fully stir for about 15 minutes, and then use ultrasonic dispersion, the ultrasonic dispersion is 500W, and the dispersion time is 15 minutes, to obtain the grinding liquid intermediate liquid, stand still, cool to room temperature, and set aside;

[0041] (3) Add 1 g of polyoxyethylene polyoxypropylene pentaerythrit...

Embodiment 3

[0044] Embodiment 3 The preparation method of gallium oxide wafer anti-cleavage suspension grinding liquid, comprises the following steps:

[0045] (1) Mix 1000g of kerosene and 590g of alkane, and use an electric magnetic stirring device to fully stir and fuse for 15 minutes to obtain a grinding liquid base liquid, which is left to stand and cooled to room temperature for later use;

[0046] (2) Under the condition of stirring by electric magnetic stirring device, add 100g of alumina micropowder of W0.5 type, 80g of hydroxyethyl cellulose, and 180g of nonylphenol polyoxyethylene ether into the base liquid obtained in step (1) , fully stirred for about 20 minutes, and then used ultrasonic dispersion. The ultrasonic dispersion was 500W, and the dispersion time was 25 minutes.

[0047] (3) Add 0.4g of polyoxyethylene polyoxypropanolamine ether, 0.4g of benzisothiazolinone, and 1g of isopropyl ketone to the intermediate liquid obtained in step (2), and stir thoroughly for 20 minu...

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Abstract

The invention discloses an anti-cleavage suspended grinding fluid for a gallium oxide wafer and a preparation method thereof. The fluid is prepared from aluminium oxide micropowder, a dispersing thixotropic agent, a surfactant, kerosene, an alkane, a pH value conditioning agent, an antifoaming agent, a bactericide and a cleaning auxiliary agent. The anti-cleavage suspended grinding fluid is preferably obtained through a large amount of experiments. The grinding fluid is good in stability, and is applicable to rough grinding and smooth grinding of the gallium oxide wafer. The material removal speed is fast, and the wafer surface is smooth and does not have obvious scratches or pits. The grinding fluid is capable of reducing mechanics expansion effect during grinding on surface micro cracks, stress damage layers and other defects left after cutting is performed , is capable of effectively inhibiting cleavage defects during grinding of the gallium oxide wafer, also is low in cost and beneficial for popularization application, and overcomes many disadvantages in the prior art.

Description

technical field [0001] The present invention relates to gallium oxide wafers (β-Ga 2 o 3 ) in the field of grinding processing technology, especially an anti-cleavage suspension slurry suitable for high-efficiency and high-quality rough / finish grinding of gallium oxide wafers and a preparation method thereof. Background technique [0002] Gallium oxide (β-Ga 2 o 3 ) as a new gallium nitride (GaN) substrate material, and traditional sapphire (Al 2 o 3 ), silicon carbide (SiC) and other materials, it has a lower lattice mismatch rate, a band gap of 4.8-4.9eV, a transmittance of more than 80% in the visible light band, and a shortest transmission wavelength of 260nm. Excellent photoelectric performance. The light transmittance of the material is comparable to that of Al 2 o 3 Comparable, the conductivity is quite similar to SiC, and it can grow large-size single crystals by the melt method, which is a substitute for Al 2 o 3 The ideal GaN substrate material for SiC and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 周海徐晓明龚凯
Owner YANCHENG INST OF TECH
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