Perovskite solar cell with enhanced graphene and preparation method thereof

A solar cell and graphene technology, applied in the manufacturing/processing of organic semiconductor devices, circuits, photovoltaic power generation, etc., can solve problems such as insufficient conversion efficiency, low conversion efficiency, and inability to mass production, and achieve improved capture-absorption. The ability of photons, the effect of improving the conversion rate, and improving the conversion efficiency

Inactive Publication Date: 2016-02-03
杨秋香
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its conversion efficiency is less than 14%
[0007] The above-mentioned inventions will gradually advance the industrialization of perovskite solar cells. However, mass production is not yet possible.
The main reason is that the conversion efficiency of the current perovskite battery is not high enough, generally below 15%.

Method used

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  • Perovskite solar cell with enhanced graphene and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1) Aluminum zinc oxide AZO conductive glass is used as the light-transmitting / transparent electrode layer;

[0029] 2) Manganese sulfide film was prepared on ITO by thermal evaporation method, with a thickness of 38 nanometers;

[0030] 3) Prepare light absorbing layer:

[0031] a. Prepare PbI2 solution, the concentration is 2.0Mol / L, and the solvent is dimethylformamide;

[0032] b. Prepare CH3NH3I solution: concentration 8mg / mL, solvent is isopropanol;

[0033] In-situ synthesis of perovskite materials by solution method: spin-coat PbI2 solution on the electron transport layer first, dry it and soak it in CH3NH3I solution to grow perovskite materials, and obtain perovskite light-absorbing layer; thickness 312nm;

[0034] 4) Preparation of electron absorbing layer

[0035] Add graphite powder into a container filled with concentrated sulfuric acid, place the container in an ice bath, stir evenly, then add potassium permanganate powder, keep the temperature at 15°C a...

Embodiment 2

[0042] 1) ITO (Indium Tin Oxides) conductive glass is used as the light-transmitting / transparent electrode layer;

[0043] 2) Manganese sulfide film was prepared on AZO by vacuum evaporation method, with a thickness of 45 nm;

[0044] 3) Prepare light absorbing layer:

[0045] a. prepare PbI2 solution, concentration is 2.3Mol / L, and solvent is dimethylformamide;

[0046] b. Prepare CH3NH3I solution: the concentration is 7.5mg / mL, and the solvent is isopropanol;

[0047] In-situ synthesis of perovskite materials by solution method: spin-coat PbI2 solution on the electron transport layer first, dry it and soak it in CH3NH3I solution to grow perovskite materials, and obtain perovskite light-absorbing layer; thickness 441nm;

[0048] 4) Preparation of electron absorbing layer

[0049] Add graphite powder into a container filled with concentrated sulfuric acid, place the container in an ice bath, stir evenly, then add potassium permanganate powder, keep the temperature at 15°C a...

Embodiment 3

[0056] 1) Use fluorine tin oxide (FTO, fluorinated opedtinoxide) conductive glass as the light-transmitting / transparent electrode layer;

[0057] 2) Manganese sulfide film was prepared on ITO by physical vapor deposition method, with a thickness of 10 nanometers;

[0058] 3) Prepare light absorbing layer:

[0059] a. prepare PbI2 solution, concentration is 3.0Mol / L, solvent is dimethylformamide;

[0060] b. Prepare CH3NH3I solution: the concentration is 5 mg / mL, and the solvent is isopropanol;

[0061] In-situ synthesis of perovskite materials by solution method: spin-coat PbI2 solution on the electron transport layer first, dry it and soak it in CH3NH3I solution to grow perovskite materials, and obtain perovskite light-absorbing layer; thickness 55nm;

[0062] 4) Preparation of electron absorbing layer

[0063] Add graphite powder into a container filled with concentrated sulfuric acid, place the container in an ice bath, stir evenly, then add potassium permanganate powder...

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Abstract

The invention discloses a perovskite solar cell with enhanced graphene and a preparation method thereof. The perovskite solar cell comprises a light transmission / transparent electrode layer, an electron transport layer, a light absorption layer, an electron absorption layer, a hole transport layer, and a top electrode which are successively stacked. The light absorption layer is a material provided with perovskite structure. The electron absorption layer is formed by graphene and oxidized graphene. The hole transport layer is formed by a ternary oxide. The top electrode is formed by a material with good conductivity. The perovskite solar cell effectively utilizes the performance of the perovskite material, is increased in the photoelectric converting efficiency by over 17 percent, and is suitable for batch production.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, in particular to a graphene-enhanced perovskite solar cell and a preparation method thereof. Background technique [0002] At present, most of the solar cell market is occupied by crystalline silicon solar cells, but the high price of crystalline silicon restricts the application and development of the photovoltaic industry. Perovskite solar cells are a new type of solar cells, and their prices are much cheaper. Using photovoltaic materials with a perovskite structure to achieve photoelectric conversion has the advantages of wide source of raw materials, simple structure, and can be prepared into flexible batteries. It has broad application prospects. However, the photoelectric conversion efficiency of this type of battery is relatively low at present, and the research focus at this stage is to improve its photoelectric conversion efficiency. [0003] Chinese invention patent CN104134711A ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/00H10K85/20H10K30/82H10K2102/00Y02E10/549Y02P70/50H10K85/50
Inventor 杨秋香
Owner 杨秋香
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